GF6968A GE | Alldatasheet

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Technical content

Features

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for Li-ion battery packs use
  • Designed for battery-switch applications Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 Continuous Drain Current (TJ = 150°C)(1) ID 6.2 A Pulsed Drain Current I DM 30 A Maximum Power Dissipation(1) TA = 25°C PD 1.5 WTA = 70°C 0.96 Operating Junction and Storage Temperature Range T J, Tstg –55 to 150 °C Maximum Junction-to-Ambient(1)Thermal Resistance R θJA 83 °C/W Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. Mechanical Data Case: TSSOP-8 Package Terminals:Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position:Any Weight:0.5g GF6968A Common-Drain Dual N-Channel MOSFET Low VGS(th) VDS 20V R DS(ON) 22m Ω ID 6.2A 4/11/01 D D G 2 G 1 0.260 (6.60) min. 0.012 (0.30) 0.204 (5.20) 0.028 (0.70) 0.020 (0.50) Dimensions in inches and (millimeters) New ProductTSSOP-8 TRENCH GENFET Mounting Pad Layout

Electrical Characteristics(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250µA2 0 –– V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250µA 0.6 –– V Gate Body Leakage I GSS VGS = ± 12V, VDS = 0V –– ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V –– 1 µA On-State Drain Current(1) ID(on) VDS ≥ 5V, VGS = 4.5V 30 –– A Drain-Source On-State Resistance(1) R DS(on) VGS = 4.5V, ID = 6.2A – 17.5 22 m Ω VGS = 2.5V, ID = 5.3A – 25 30 Forward Transconductance(1) gfs VDS = 10V, ID = 6.2A – 26.5 – S Dynamic Total Gate Charge Q g – 14 20 Gate-Source Charge Q gs VDS = 10V, VGS = 4.5V – 2.2 – nC Gate-Drain Charge Q gd ID = 6.2A – 3 – Turn-On Delay Time t d(on) – 11 30 Turn-On Rise Time t r VDD = 10V, RL = 10Ω – 15 50 Turn-Off Delay Time t d(off) ID = 1A, VGEN = 4.5V – 43 100 ns Fall Time t f R G = 6Ω – 22 50 Input Capacitance C iss VDS = 10V, VGS = 0V – 1240 – Output Capacitance C oss f = 1.0 MHz – 200 – pF Reverse Transfer Capacitance C rss – 120 – Source-Drain Diode Maximum Diode Forward Current I S —– – 1.7 A Diode Forward Voltage V SD IS = 6.2A, VGS = 0V – 0.8 1.2 V Note:(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% GF6968A Common-Drain Dual N-Channel MOSFET G D S VIN VDD VGEN R G R D VOUT DUT Input, VIN td(on) Output, VOUT ton tr td(off) toff tf INVERTED 90% 10%10% 90 % 50% 50% 10% 90% PULSE WIDTH Switching Test Circuit Switching Waveforms

Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) 01 2 34 Fig. 1 – Output Characteristics 0.01 0.015 0.02 0.025 0.035 0.03 0.04 0 5 10 15 20 25 30 Fig. 4 – On-Resistance vs. Drain Current Fig. 2 – Transfer Characteristics 1.5V 0.8 0.6 1.4 1.6 1.2 Fig. 5 – On-Resistance vs. Junction Temperature VGS = 4.5V ID = 6.2A VGS = 4.5V TJ = 125°C 2.0V2.5V VDS = 10V3.5V 0.3 1.1 0.9 0.5 0.7 Fig. 3 – Threshold Voltage vs. Temperature ID = 250µA ID -- Drain Source Current (A) VDS -- Drain-to-Source Voltage (V) R DS(ON) -- On-Resistance (Ω ) ID -- Drain Current (A) ID -- Drain Current (A) VGS -- Gate-to-Source Voltage (V) R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) VGS(th) -- Threshold Voltage (V) TJ -- Junction Temperature (°C) --50 --25 25 50 75 100 125 1500 --50 --25 25 50 75 100 125 1500 3.0V --55°C 25°C VGS = 2.5V VGS = 4.5V

Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) 0.01 0.1 100 TJ = 125°C Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 024 8 6 Fig. 7 – Gate Charge 10 12 14 16 VDS = 10V ID = 6.2A 300 600 900 1200 1500 1800 04 81 2 1 6 2 0 Fig. 8 – Capacitance C iss C rss C oss f = 1MHZ VGS = 0V IS -- Source Current (A) VSD -- Source-to-Drain Voltage (V) Q g -- Gate Charge (nC) VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) VDS -- Drain-to-Source Voltage (V) --55°C Fig. 6 – On-Resistance vs. Gate-to-Source Voltage ID = 6.2A 0.02 0.04 0.06 0.08 1 234 5 TJ = 125°C TJ = 25°C R DS(ON) -- On-Resistance (Ω ) VGS -- Gate-to-Source Voltage (V) 25°C

Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 13 – Maximum Safe Operating Area ID -- Drain Current (A) VDS -- Drain-Source Voltage (V) 0.01 0.1 0.1 100 10 100 Fig. 12 – Power vs. Pulse Duration VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C R DS(ON) Limit 100 µs 1ms 10ms 100ms DC 10s 0.10.01 1 10 100 Fig. 10 – Breakdown Voltage vs. Junction Temperature ID = 250µA BV DSS -- Breakdown Voltage (V) TJ -- Junction Temperature (°C) --50 --25 25 50 75 100 1250 150