GF4450 GE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for Low Voltage DC/DC Converters
  • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 Continuous Drain Current(1) ID 7.5 A Pulsed Drain Current I DM 50 Maximum Power Dissipation(1) TA = 25°C PD 2.5 WTA = 70°C 1.6 Operating Junction and Storage Temperature Range T J, Tstg –55 to 150 °C Junction-to-Ambient Thermal Resistance(1) R θJA 50 °C/W Note:(1) Surface Mounted on FR4 Board, t ≤ 10s Mechanical Data Case: SO-8 molded plastic body Terminals:Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position:Any Weight:0.5g GF4450 N-Channel Enhancement-Mode MOSFET VDS 60V R DS(ON) 24m Ω ID 7.5A 7/10/01 1 4 0.244 (6.20) 0.228 (5.79) 0.157 (3.99) 0.150 (3.81) 0.020 (0.51) 0.009 (0.23) 0.004 (0.10) 0.197 (5.00) 0.189 (4.80) 0.069 (1.75) 0.053 (1.35) 0.019 (0.48) 0.010 (0.25)x 45° 0°– 8° 0.050(1.27) 0.016 (0.41) 0.009 (0.23) 0.007 (0.18) Dimensions in inches and (millimeters) SO-8 TRENCH GENFET New Product 0.245 (6.22) Min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) 0.165 (4.19) 0.155 (3.94) 0.05 (1.27) 0.04 (1.02) Mounting Pad Layout

Electrical Characteristics(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250µA6 0 –– V Gate Threshold Voltage V GS(th) VDS = VGS , ID = 250µA 2.0 –– V Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V –– ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 60V, VGS = 0V –– 1.0 µA On-State Drain Current(2) ID(on) VDS ≥ 5V, VGS = 10V 20 –– A Drain-Source On-State Resistance(2) R DS(on) VGS = 10V, ID = 7.5A – 12 24 m Ω VGS = 6.0V, ID = 6.5A – 14 30 Forward Transconductance(2) gfs VDS = 15V, ID = 7.5A – 36 – S Dynamic Total Gate Charge Q g – 65 91 Gate-Source Charge Q gs VDS = 30V, VGS = 10V – 12 – nC Gate-Drain Charge Q gd ID = 7.5A – 14 – Turn-On Delay Time t d(on) – 17 30 Rise Time t r VDD = 30V, RL = 30Ω – 13 20 Turn-Off Delay Time t d(off) ID ≈ 1A, VGEN = 10V – 78 117 ns Fall Time t f R G = 6Ω – 31 40 Input Capacitance C iss VGS = 0V – 3147 – Output Capacitance C oss VDS = 30V – 283 – pF Reverse Transfer Capacitance C rss f = 1.0MHZ – 140 – Source-Drain Diode Diode Forward Voltage V SD IS = 2.1A, VGS = 0V – 0.71 1.2 V Max. Diode Forward Current I S –– 2.1 A Notes:(1) Surface Mounted on FR4 Board, t ≤ 10s (2) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% GF4450 N-Channel Enhancement-Mode MOSFET G D S VIN VDD VGEN R G R D VOUT DUT Input, VIN td(on) Output, VOUT ton tr td(off) toff tf INVERTED 90% 10%10% 90 % 50% 50% 10% 90% PULSE WIDTH Switching Test Circuit Switching Waveforms

Fig. 1 – Output Characteristics 0.015 0.005 0.01 0.02 0.03 0.04 0.025 0.035 10 20 30 40 50 Fig. 4 – On-Resistance vs. Drain Current 1 23456 Fig. 2 – Transfer Characteristics 0.6 0.8 0.4 1.2 1.4 1.6 1.8 Fig. 5 – On-Resistance vs. Junction Temperature VGS = 10V ID = 7.5A --55°C VGS = 4.5V 25°C Fig. 3 – Threshold Voltage vs. Temperature ID -- Drain-to-Source Current (A) VDS -- Drain-to-Source Voltage (V) R DS(ON) -- On-Resistance (Ω ) ID -- Drain Current (A) ID -- Drain Current (A) VGS -- Gate-to-Source Voltage (V) R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) VGS(th) -- Gate-to-Source Threshold Voltage (V) TJ -- Junction Temperature (°C) TJ = 125°C --50 --25 25 50 75 100 125 1500 --50 --25 25 50 75 100 125 1500 1.6 1.4 1.8 2.4 2.6 2.8 3.2 2.2 4.5V5.0V VDS = 10V ID = 250µA 3.5V 4.0V VGS =10V 6.0V 10V Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GF4450 N-Channel Enhancement-Mode MOSFET

0.1 0.01 100 500 1000 3000 1500 2000 2500 3500 4000 01 02 0 3 0 4 0 6 0 50 Fig. 8 – Capacitance C iss C rss 01 0 3 0 20 Fig. 7 – Gate Charge 40 50 60 70 IS -- Source Current (A) VSD -- Source-to-Drain Voltage (V) Q g -- Gate Charge (nC) VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) VDS -- Drain-to-Source Voltage (V) C oss f = 1MHz VGS = 0V VDS = 30V ID = 7.5A TJ = 125°C 25°C --55°C Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 0.01 0.02 0.04 0.03 2468 1 0 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage R DS(ON) -- On-Resistance (Ω ) VGS -- Gate-to-Source Voltage (V) ID = 7.5A TJ = 125°C 25°C Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GF4450 N-Channel Enhancement-Mode MOSFET

Characteristic Curves(TA = 25°C unless otherwise noted) GF4450 N-Channel Enhancement-Mode MOSFET Fig. 11 – Transient Thermal Impedance Fig. 13 – Maximum Safe Operating Area ID -- Drain Current (A) VDS -- Drain-Source Voltage (V) 0.01 0.1 0.1 100 10 100 Fig. 12 – Power vs. Pulse Duration VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C R DS(ON) Limit 100 µs 1ms 10ms 100ms DC 10s 0.10.01 1 10 100 Fig. 10 – Breakdown Voltage vs. Junction Temperature BV DSS -- Drain-to-Source Breakdown Voltage (V) TJ -- Junction Temperature (°C) --50 --25 25 50 75 100 125 1500 ID = 250µA