GF4435 GE | Alldatasheet

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Technical content

Features

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Specially Designed for Low Voltage DC/DC Converters
  • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS –30 V Gate-Source Voltage V GS ±20 Continuous Drain Current I D –8.0 A Pulsed Drain Current I DM –50 Maximum Power Dissipation TA = 25°C PD 2.5 WTA = 70°C 1.6 Operating Junction and Storage Temperature Range T J, Tstg –55 to 150 °C Maximum Junction-to-Ambient Thermal Resistance(1) R θJA 50 °C/W Note:(1) Surface Mounted on FR4 Board, t ≤ 10 sec. Mechanical Data Case: SO-8 molded plastic body Terminals:Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position:Any Weight:0.5g GF4435 P-Channel Enhancement-Mode MOSFET VDS –30V R DS(ON) 20m Ω ID –8.0A 7/10/01 1 4 0.244 (6.20) 0.228 (5.79) 0.157 (3.99) 0.150 (3.81) 0.020 (0.51) 0.009 (0.23) 0.004 (0.10) 0.197 (5.00) 0.189 (4.80) 0.069 (1.75) 0.053 (1.35) 0.019 (0.48) 0.010 (0.25)x 45° 0°– 8° 0.050(1.27) 0.016 (0.41) 0.009 (0.23) 0.007 (0.18) Dimensions in inches and (millimeters) SO-8 TRENCH GENFET 0.245 (6.22) Min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) 0.165 (4.19) 0.155 (3.94) 0.05 (1.27) 0.04 (1.02) Mounting Pad Layout

Electrical Characteristics(TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V GS(th) VDS = VGS , ID = –250µA –1.0 –– 3.0 V Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V –– ±100 nA Zero Gate Voltage Drain Current I DSS VDS = –30V, VGS = 0V –– – 1.0 µA On-State Drain Current(1) ID(on) VDS ≥ –5V, VGS = –10V –40 –– A Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = –250µA –30 –– V Drain-Source On-State Resistance(1) R DS(on) VGS = –10V, ID = –8.0A – 15.3 20 m Ω Forward Transconductance(1) gfs VDS = –15V, ID = –8.0A – 22 – S Dynamic Total Gate Charge Q g – 54 60 Gate-Source Charge Q gs VDS = –15V, VGS = –10V – 8.5 – nC Gate-Drain Charge Q gd ID = –4.6A – 10.3 – Turn-On Delay Time t d(on) – 24 30 Rise Time t r VDD = –15V, RL = 15Ω – 12 30 Turn-Off Delay Time t d(off) ID ≈ –1A, VGEN = –10V – 78 120 ns Fall Time t f R G = 6Ω – 37 80 Input Capacitance C iss VGS = 0V – 2520 – Output Capacitance C oss VDS = –15V – 490 – pF Reverse Transfer Capacitance C rss f = 1.0MHZ – 335 – Source-Drain Diode Maximum Diode Forward Current I S –– – 2.1 A Diode Forward Voltage V SD IS = –2.1A, VGS = 0V –– 0.75 –1.2 V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% GF4435 P-Channel Enhancement-Mode MOSFET G D S VIN VDD VGEN R G R D VOUT DUT Input, VIN td(on) Output, VOUT ton tr td(off) toff tf INVERTED 90% 10%10% 90 % 50% 50% 10% 90% PULSE WIDTH Switching Test Circuit Switching Waveforms

Fig. 1 – Output Characteristics 0.015 0.01 0.02 0.03 0.04 0.05 0.06 0.025 0.035 0.045 0.055 01 0 2 0 3 0 4 0 5 0 Fig. 4 – On-Resistance vs. Drain Current 1 23456 Fig. 2 – Transfer Characteristics --3V 0.8 0.6 1.2 1.4 1.6 Fig. 5 – On-Resistance vs. Junction Temperature VGS = --10V ID = --8.0A --55°C VGS = --4.5V --4.0V 25°C VGS = --10V Fig. 3 – Threshold Voltage vs. Temperature --ID -- Drain-to-Source Current (A) --VDS -- Drain-to-Source Voltage (V) R DS(ON) -- On-Resistance (Ω ) -- ID -- Drain Current (A) -- ID -- Drain Current (A) -- VGS -- Gate-to-Source Voltage (V) R DS(ON) -- On-Resistance (Normalized) TJ -- Junction Temperature (°C) --VGS(th) -- Gate-to-Source Threshold Voltage (V) TJ -- Junction Temperature (°C) TJ = 125°C --50 --25 25 50 75 100 125 1500 --50 --25 25 50 75 100 125 1500 1.6 1.4 1.2 1.8 2.4 2.2 --3.5V --4.5V --5.0V VGS = --10V VDS = --10V ID = --250µA --6.0V Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GF4435 P-Channel Enhancement-Mode MOSFET

Fig. 8 – Capacitance C iss C oss C rss 01 0 2 0 4 0 30 Fig. 7 – Gate Charge 50 60 VDS = --15V ID = --4.6A Q g -- Gate Charge (nC) -- VGS -- Gate-to-Source Voltage (V) C -- Capacitance (pF) --VDS -- Drain-to-Source Voltage (V) f = 1MHz VGS = 0V 0.1 0.01 100 --IS -- Source Current (A) --VSD -- Source-to-Drain Voltage (V) TJ = 125°C 25°C --55°C Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 0.02 0.01 0.03 0.05 0.07 0.04 0.08 0.06 2468 1 0 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage R DS(ON) -- On-Resistance (Ω ) -- VGS -- Gate-to-Source Voltage (V) ID = -- 8.0A TJ = 125°C TJ = 25°C Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) GF4435 P-Channel Enhancement-Mode MOSFET

Characteristic Curves(TA = 25°C unless otherwise noted) GF4435 P-Channel Enhancement-Mode MOSFET Fig. 11 – Transient Thermal Impedance Fig. 13 – Maximum Safe Operating Area ID -- Drain Current (A) VDS -- Drain-Source Voltage (V) 0.01 0.1 0.1 100 10 100 Fig. 12 – Power vs. Pulse Duration VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C R DS(ON) Limit 100 µs 1ms 10ms 100ms DC 10s 0.10.01 1 10 100 Fig. 10 – Breakdown Voltage vs. Junction Temperature -- BVDSS -- Drain-to-Source Breakdown Voltage (V) TJ -- Junction Temperature (°C) --50 --25 25 50 75 100 125 1500 ID = --250 A