GCU08BA-130 MITSUBISHI | Alldatasheet

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Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU08BA-130 OUTLINE DRAWING Dimensions in mm APPLICATION Current source inverters, DC choppers, Induction heaters, DC to DC converter (208) 160MIN (80) (20) 9MAX (250) 80±0.5 (140) (165) (80)(85) (104) (120) (48) (46.5) (46.5) (48) (160) G K G KG K G K G K G K φ47±0.2 LED4 LED3 LED2 LED1 TPG TPX DE2 DE1 20MAX 10.1±0.9 26.2±0.3 14.5±1.3 6±0.5 6±0.5 A 6±0.5 6 ±0.5 (5) 40MAX (20) (13.7) (1.6) 10MIN φ47±0.2 A PART MAGNIFICATION G Symmetrical GCT unit G GCT and gate driver are connected

Mar. 2004 RMS on-state current Average on-state current Surge on-state current Current-squared, time integration Critical rate of rise of reverse recovery current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current UnitSymbol VRRM VRSM VDRM VDSM V(LTDS) Parameter V V V V V Voltage class 6500 6500 6500 6500 3600 Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Long term DC stability voltage MAXIMUM RATINGS MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART Conditions Gate driver energized Gate driver energized Gate driver energized, λ = 100 Fit 520 330 4.8 9.6 × 104 1000 100 120 500 800 Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf = 62°C VDM = 3/4 VDRM , VD = 3000V, LC = 0.3µH Tj = 25/125°C (See Fig. 1, 3) VD = 3000V, IT = 800A, CS = 0.1µF, RS = 10Ω Tj = 25/125°C, f = 60Hz (See Fig. 1, 2) IT = 800A, VR = 3000V, Tj = 25/125°C C S = 0.1µF, RS = 10Ω (See Fig. 4, 5) One half cycle at 60Hz, Tj = 125°C start Ratings A A kA A2s A/µs kW kW W W V V A A IT(RMS) IT(AV) ITSM I2t diR/dt PFGM PRGM PFG(AV) PRG(AV) VFGM VRGM IFGM IRGM Symbol Parameter Conditions ITQRM Repetitive controllable on-state current 800 Unit A diT/dt Critical rate of rise of on-state current 1000 A/µs On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay time Turn-on switching energy Storage time Turn-off switching energy Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage 3000 V TM IRRM IDRM IGRM dv/dt tgt td Eon ts Eoff Q RR Erec IGT VGT V mA mA mA V/µs µs µs J/P µs J/P µC J/P A V

ELECTRICAL CHARACTERISTICS

Symbol Parameter Conditions Limits Min Typ Max Unit 5.5 250 100 0.6 2.3 1800 4.4 0.5 1.5 I T = 400A, Tj = 125°C VRM = 6500V, Tj = 125°C VDM = 6500V, Tj = 125°C, Gata driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave) I T = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C C S = 0.1µF, RS = 10Ω (See Fig. 1, 2) IT = 400A, VD = 3000V, di/dt = 1000A/µs C S = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 1, 2) IT = 800A, VDM = 3/4 VDRM , VD = 3000V C S = 0.1µF, RS = 10Ω , Tj = 125°C (See Fig. 1, 5) IT = 400A, VDM = 4000V, VD = 3000V C S = 0.1µF, RS = 10Ω , Tj = 125°C (See Fig. 1, 5) VR = 3000V, IT = 400A, di/dt = 1000A/µs C S = 0.1µF, RS = 10Ω , Tj = 125°C (See Fig. 4, 5) VD = 24V, RL = 0.1Ω , Tj = 25°C DC method

Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Power supply voltage Gate power consumption Delay time of on gate current Delay time of off gate current Control signal Power supply connector Status signal DC power supply IT = 420Arms, f = 780Hz, duty = 0.33 Ta = 25°C Ta = 25°C Optical fiber data link Transmitter : HFBR-1521 : Agilent Receiver : HFBR-2521 : Agilent Phoenix contact Type name : MSTB25/2-G-508AU V GIN PGIN tfd trd V W µs µs GATE DRIVER PART Symbol Parameter Conditions Limits Min Typ Max Unit 3.0 3.0 (Note 1) Mounting force Weight Pole piece diameter (GTC device) Housing thickness (GTC device) ±0.2mm ±0.5mm FM kN g mm mm Symbol Parameter Conditions Limits Min 11.1 Typ 1100 Max 15.8 Unit MECHANICAL DATA Junction operating temperature Storage temperature Ambient operation temperature Thermal resistance Recommend : ≤ 40°C Junction to Fin Tj Tstg Ta R t(j-f) K/W Symbol Parameter Conditions Limits Min –10 –10 –10 Typ Max 125 0.025 Unit THERMAL DATA

Mar. 2004 Fig. 1 Turn-on and Turn-off waveform Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit (With clamp circuit) Fig. 5 Turn-off and Reverse recovery test circuitFig. 4 Reverse recovery waveform MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE td ; 0VRG ~ 0.9VD tgt ; 0VRG ~ 0.1VD ts ; 0VRG ~ 0.9IT diG /dt ; 0.1IGM ~ 0.9IGM tw ; 0VRG ~ 0.9IGM diGQ /dt ; 0.1IRG ~ 0.9IRG tfd ; 50% on signal ~ 0VRG trd ; 50% off signal ~ 0VRG Integration area for Eoff ; 5%VD ~ until 100µs VD VRG IGM ts VRG IT VD diGQ /dt diG /dt IGQ IG tgt td tfd trd Control signal tw t(Eoff) = 100µs DUT L VD Rs Cs Rc L (load) FWDi DUT CDi Cc VD Lc ANL 90%IRM VRM trr IT 50%IRM VR Q RR = (trr×IRM )/2 Integration area for Erec ; 0IT ~ until 100µs[] di/dt (0 ~ 50%IRM ) t(Erec) = 100µs 50%IT Cs Cs L (load) DUT DUT VD Rs Rs ANL

Mar. 2004 Note 1. Status signal 1. Status signal from LED (1) Status signal Status of GCT On state Off state LED 1 (Red) LED 2 (Yellow) OFF ON ON OFF 2. Status signal from Transmitter (L : Light NL : No light) Control signal (GDU input) Status signal (GDU output) Control signal (Control board) NL L L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) L Normal Fault L NL L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) L NL Normal Fault L NL L NL (Always No light) (Always light) L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) (1) Normal operation (3) Fault signal (G-K short) (2) Fault signal (O/V or U/V) (4) Fault signal (fiber optic) MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 20±1V Voltage down 20±1V Voltage down Normal Normal G-K short G-K short Normal Fault Fault Fault PS LED (LED 4) (Green) G-K LED (LED 3) (Green) (2) Fault signal Status G-K Power Supply On Off Off Off On Off On Off

Mar. 2004 PERFORMANCE CURVES MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 200 400 600 800 1000 CONDITION VD =3000V, VDM =V D +2.34×IT Tj=125°C, Cs=0.1µF Rs=10Ω MAXIMUM ON-STATE CHARACTERISTIC ON-STATE CURRENT I T (A) ON-STATE VOLTAGE V TM (V) TURN OFF SWITCHING ENERGY E off (J/P) TURN OFF CURRENT I T (A) Eoff VS IT (Max) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) Zth (K/W) TIME (S) 0.03 0.035 0.02 0.025 0.015 0.005 0.01 01234567891 0 Tj=125°C Tj=25°C REVERSE RECOVERY ENERGY Erec (J/P) ON-STATE CURRENT I T (A) Erec VS IT (Max) 200 400 600 800 1000 CONDITION VR =3000V, Tj=125°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω TURN ON SWITCHING ENERGY E on (J/P) TURN ON CURRENT I T (A) Eon VS IT (Max) 1.4 10000 1.2 1.0 0.6 0.8 0.2 0.4 0.0 800600400200 CONDITION VD =3000V, Tj=125°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω 10–2 10–12 35 7 1002 35 7 1012 35 710–3 2 35 7 101 104 102 103