GCA75BA60 SANREX | Alldatasheet
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Technical content
SanRex IGBT Module GCA75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains two IGBTs connected in series with a fast switching, soft recovery diode (trr=0.1μs) reverse connected across each IGBT.
- IC＝75A VCES＝600V
- VCE〔sat〕＝2.4V Typ
- tf＝0.10μs Typ
- Soft recovery diode （Applications） Inverter for motor control (VVVF) UPS, AC servo DC power supply, Welder q C2 E1 e u y t r w ■Maximum Ratings （Tj＝25℃unless otherwise specified） Symbol Item VCES Collector-Emitter Voltage Conditions with gate terminal shorted to emitter Ratings GCA75BA60 Unit V 600 VGES Gate-Emitter Voltage with collector shorted to emitter V ±20 Ic Collector Current DC Pulse（１ms） A ICP 150 －Ic Reverse Collector Current A Pc Total Power Dissipation Tc＝25℃ W 315 Tj Junction Temperature 150 Tstg Storage Temperature －40 to ＋125 VISO Isolation Voltage（R.M.S.） A.C.１minute V 2500 Mounting Torque Mounting（Ｍ6） Terminal（Ｍ5） Recommended Value 2.5-3.9（25-40） N･m （kgf･cm） 4.7（48） Recommended Value 1.5-2.5（15-25） 2.7（28） Mass Typical Value g 210 ■Electrical Characteristics （Tj＝25℃unless otherwise specified） Symbol Item IGES Gate Leakage Current Conditions VGE＝±20V，VCE＝0V Ratings Min. Typ. Max. Unit nA ±500 ICES Collector Cut-Off Current VCE＝600V，VGE＝0V mA 1.00 V（BR）CES Collector-Emitter Breakdown Voltage VGE＝0V，Ic＝１mA V 600 VGE（th） Gate Threshold Voltage VCE＝10V，Ic＝7.5mA V 3.0 2.40 7.00 VCE（sat） Collector-Emitter Saturation Voltage Ic＝75A，VGE＝15V V 4.00 2.80 Cies Input Capacitance nF 0.10 7.50 tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time Vcc＝300V，RG＝8Ω μs 0.20 0.20 td（on） 0.10 0.40 tf Emitter-Collector Voltage 0.40 0.20 td（off） 1.80 0.80 VECS －Ic＝75A，VGE＝0V V 0.10 2.80 trr Reverse Recovery Time μs 0.15 Rth（j-c）Thermal Resistance IGBT-Case ℃/W 0.40 Diode-Case 0.55 94.5MAX 3-M5depth12mm 2- 6.5 NAME PLATE 32MAX 31MAX 17.5 TAB#110（0.5t）fit 23±0.3 23±0.3 80±0.3 18±0.3 4±0.6 17±0.6 35.5MAX 4±0.6 Unit：mm UL;E76102（M）
２０ＶVGE=８Ｖ９Ｖ１０Ｖ１２ＶTj=２５℃Pulse Test １５ＶOutput Characteristics（Typical） Collector-Emitter Voltage VCE（V）１５０６０９００１２３４５６７８９ １０１２０３００Collector Current Ic（A）Tj=２５℃Tj=１２５℃VCE=１０V Pulse Test Forward Transfer Characteristics（Typical）Gate-Emitter Voltage VGE（V）１５０１２０９０６０３００６５８７１０９１２１１１３１５１４Collector Current Ic（A）Tj=２５℃Tj=１２５℃VGE=１５V Pulse Test Saturation Voltage Characteristics（Typical） Collector Current Ic（A）５４３２１００ ３０６０９０１２０１５０Collector-Emitter Voltage VＣＥ（V）IC=７５A IC=１５０A IC=３０A Tj=２５℃Pulse Test Gate-Emitter Voltage VGE（V） Collector-Emitter Saturation Voltage Characteristics（Typical） ０１３２４５６８７９１０５２０ Collector-Emitter Voltage VＣＥ（V）Tj=２５℃Tj=１２５℃Pulse Test ５５５２２Forward Voltage of Free Wheeling Diode（Typical）０２１３４５１０ １１０
２ Emitter-Collector Voltage VECS（V）Reverse Collector Current -Ic（A）Cies
VGE=０V f=1MHZ Tj=２５℃ Collector-Emitter Voltage VCE（V）Input Capacitance, Output Capacitance,Reverse Transfer Capacitance（Typical）５５５５５２２２２５２１０ ２１０ ０１０ １１０ ２１０ ３１０ ４Capacitance Ｃ（pＦ）
Tj=２５℃Vcc=２００V Gate Charge vs. Gate-Emitter Voltage（Typical）Gate Charge QG（nC）２０１６１２８０４１００５００１５０２００２５０Gate-Emitter Voltage VGE（V）Tj=１２５℃RG=８ΩVCC=３００ＶＶGE/-VGE=１５Ｖ/-５Ｖtd（on）t r td（off）t f Collector Current Ic（A）Switching Characteristics（Typical）５２５２５１０ １１０ ３１０ ２２２５１０ ２Switching Time tr,td（on）, tf,td（off） （ns）Max. Junction to Case Time t（sec）１０ －５５１０ －６２２ ５１０ －４２ ５１０ －３２ ５１０ －１５２ ５１０ ０２ ５１０ １２ ５２１０ －２５Transient Thermal Impedance（IGBT）２５２５１０ －２１０ －１１０ ０１０ －４１０ －３２２５５Transient Thermal Impedance θｊ-ｃ（℃/Ｗ）Max. Junction to Case Time t（sec）１０ －５５１０ －６２２ ５１０ －４２ ５１０ －３２ ５１０ －１５２ ５１０ ０２ ５１０ １２ ５２１０ －２５２５２５１０ －２１０ －１１０ ０１０ －４１０ －３２２５５Transient Thermal Impedance θｊ-ｃ（℃/Ｗ）Transient Thermal Impedance（FWD）Irr Tj=２５℃VGE= -１０V -di/dt=１５０A/μStrr Reverse Collector Current -Ic（A）２５５５２５５２１０ ２１０ １５２５５２１０ ２１０ １１０ １１０ ２Reverse Recovery Characteristics of Free-Wheel Diode（Typical） Reverse Recovery Current Ｉｒｒ（A）Reverse Recovery Time tｒｒ（ns）