DFA50BA80 SANREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DFA50BA80/160 THREE PHASE DIODE＋THYRISTOR SanRex Power Module, DFA50BA, is complex isolated module which is designed for rash current circuit. It contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line.

  • This Module is designed very compactly. Because diode module and thyristor put together.
  • This Module is also isolated type between electorode terminal and mounting base. So you can put this Module and other one together in a same fin. （Application）
  • Inverter for AC or DC motor control, Current stabilized power supply, Switching power supply. ■Maximum Ratings （Tj＝25℃unless otherwise specified）
  • DIODE Symbol Item Ratings DFA50BA80 800 960 DFA50BA160 1600 1700 Unit VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage V V Symbol Item Output Current (D.C.) Conditions Ratings Unit A ID Three phase full wave, Tc＝117℃ IFSM Surge forward current 1cycle, 50/60HZ, peak value, non-repetitive A Tj Operating Junction Temperature －40 to ＋150 Tstg Storage Temperature －40 to ＋125 ８０３２３０２０１７２０２０９３.５MAX ２９5 １１１８２２MAX ４.０５０.５MAX １７6 Unit：㎜ ■Electrical Characteristics Symbol IRRM Item Repetitive Peak Reverse Current,max. Conditions Tj＝150℃，VR=VRRM Ratings 1.30 0.25 Unit mA VFM Forward Voltage Drop,max. Tj＝25℃，IF＝50A Inst. measurement V Rth（j-c）Thermal Impedance, max. Junction to Case（TOTAL） ℃/W 0.10 Rth（c-f）Thermal Impedance, max. Case to Fin ℃/W 6 7 VISO Isolation Breakdown Voltage (R.M.S.) Mounting Torque A.C. 1minute 2500 V Mounting（M5） Terminal（M5） Mass Recommended Value 1.5-2.5（15-25） Recommended Value 1.5-2.5（15-25） 2.7（28） 2.7（28） N･m （kgf･B） g Typical Value 150 SanRex®

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DFA50BA80/160 ■Maximum Ratings （Tj＝25℃unless otherwise specified） Symbol Item Ratings DFA50BA80 800 960 DFA50BA160 1600 1700 Unit VRRM VRSM Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage V V 800 1600 VDRM Repetitive Peak off-State Voltage V Symbol Item Conditions Ratings Unit IT（AV） Average On-State Current Singl phase half wave. 180°conduction, Tc＝85℃ ITSM Surge On-State Current I2t I2t １cycle, 50/60HZ, peak value, non-repetitive A A 2660 A2S di／dt Critical Rate of Rise of On-State Current IG＝100mA，VD＝1／2VDRM，diG/dt＝0.1A/μs Tj Operating Junction Temperature Tstg Storage Temperature Mounting Torque Mounting（M5） Terminal（M5） Mass Recommended Value 1.5-2.5（15-25） Recommended Value 1.5-2.5（15-25） Typical Value 150 A/μs －40 to ＋135 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V －40 to ＋125 2.7（28） 2.7（28） 150 N･m （㎏f･B） g Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current,max. IRRM Repetitive Peak Reverse Current,max. Tj＝135℃，VD＝VDRM Tj＝135℃，VD＝VRRM VTM Peak On-State Voltage,max. IGT Gate Trigger Current,max. dv／dt Critical Rate of Rise of Off- State Voltage,min. Tj＝25℃，ITM＝50A，Inst. measurement VD＝6V，IT＝1A mA mA 1.25 V mA VGT Gate Trigger Voltage,max. VD＝6V，IT＝1A V Rth（j-c）Thermal Impedance, max. Junction to Case 500 V/μs 0.80 ℃/W Case to Fin 0.10 ℃/W ■Electrical Characteristics

  • THYRISTOR Rth（c-f）Thermal Impedance, max. DIODE Maximum Forward Characteristics Forward Voltage Drop VF（V）０． ５ １． ０１． ５２． ５２． ０１０００ １００ ２０１０ ２００５００５０ Forward Current IF（A）Ｔｊ=２５℃Max. Output Current ID（A）２０４０１４０６０１２０８０１００００３０４０１０５０２０６０DIODE Output Current vs. Power Dissipation Power Dissipation Pav（W）Three Phase

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DFA50BA80/160 Output Current ID（A）１００９０８０１４０１５０１２０１１０１３００５０３０４０１０２０６０DIODE Output Current vs. Allowable case Temperature Allowable Case Temperature Tc（℃）Three Phase Start １００２００６００５００４００３００７００８００９０００１２５２０５０１００ Time（Cycles）Surge Forward Current Rating （Non-Repetitive） Surge Forward Current IFSM（A）Per one element ６０Hz ５０Hz Ｔｊ=２５℃ start Ｓｉｎｇｌｅ ｐｈａｓｅ ｈａｌｆ ｗａｖｅ１０ ０１０ １５５５５５１０ －１１０ －２２２２２５５２２２１０ ー６１０ ー５１０ ー４１０ ー３１０ ー２１０ ０Time t（sec）DIODE Transient Thermal Impedance －１１０ －２１０ －３１０ －４１０ －５２２２２２５５５５５Transient Thermal Impedance θj-c（℃/W）Junction to Case Maximum Gate Characteristics Gate Current（mA）1 １０． ５０． ２２５１０２０５０１００１０００１００ ２０１０ ２００ ５００２０００ ５０００１００００５０Gate Voltage（V）１３５℃２５℃Average Gate Power（３W）Peak Gate Power（１０W）Peak Forward Gate Voltage（10V）Maximum Gate Non-Trigger Voltage －１０℃Peak Gate Current（３A）SCR Maximum Forward Characteristics On-State Voltage Drop VTM（V）０． ５１． ５１． ０２． ５２． ０１０００ １００ ２０１０ ２００５００５０On-State Peak Current IT（A）Ｔｊ=２５℃Max. Output Current（A）１０２０４０３０５０６０７０００３０４０１０５０２０６０SCR Output Current vs. Power Dissipation Power Dissipation（W）Output Current（A）１００２０４０６００８０１４０１６０１２００５０３０４０１０２０６０SCR Output Current vs. Maximum Allowable case Temperature Maximam Allowable Case Temperature（℃）１０ ０５５５５１０ －１１０ －２２２２５５２２２１０ ー６１０ ー５１０ ー４１０ ー３１０ ー２１０ ０Time t（sec）SCR Transient Thermal Impedance －１１０ －２１０ －３１０ －４２２２２５５５５Transient Thermal Impedance θj-c（℃/W）Junction to Case Maximum