GBP005 HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o 1.5A
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode GBPXX H igh Diode Semiconductor GBP Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications GBP GBP005 THRU GBP10 ~ ~ Item Symbol Unit Conditions GBP 005 01 02 04 06 08 10 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A 60Hz sine wave, R- load Tc=50℃ 1.5 Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 17 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =1.0A, Pulse measurement, Rating of per diode 1.1 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Thermal Resistance R θ J-A ℃/W Between junction and ambient 47 R θ J-C Between junction and lead
H igh Diode Semiconductor The cruve graph is for reference only, can't be the basis for judgment FIG.1-FORWARD CURRENT DERATING CURVE TEMPERATURE AVERAGE FORWARD CURRENT AMPERES 120 140 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD AMBIENT CASE FIG.3-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(VOLTS) CAPACITANCE,(pF) 10.0 100 0.1 1.0 4.0 1.0 100 T J =25°C,f=1MH Z NUMBER OF CYCLETS AT 60Hz PEAK FORWARD SURGE CURRENT, AMPERES FIG.2-MAXIMUM NON-REPETITIVE SUNRGE CURRENT 100 PULSE WIDTH 8.3ms SINGLE HALF-SINE -WAVE (JEDEC METHOD) FIG.5-TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) INSTANTANCEOUS REVERSE CURRENT, （u A) 1000 0.01 100 120 140 1.0 0.1 100 T J =150°C T J =125°C T J =100°C T J =25°C INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 1.0 0.01 0.1 T J = 25°C PULSE WIDTH 300us 2% DUTY CYCLE
H igh Diode Semiconductor GBP Dimensions in inches and (milimeters) .580(14.75) .561(14.25) .110X45° (2.8) .410(10.20) .417(10.60) .046(1.17) .056(1.42) .034(0.86) .028(0.70) .140(3.56) .160(4.06) .091(2.3) .610(15.5) .571(14.5) .142(3.6) .133(3.4) .028(0.7) .043(1.1) .024(0.6) .012(0.3) .106(2.7)