GBJ25A NELLSEMI | Alldatasheet
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UL recognition file number E320098 Small volume, light weight Typical IR less than 1.0 µA TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave Epoxy meets UL 94 V-O flammability rating PRIMARY CHARACTERRISTICS IF(AV) Weight: 6.5g (0.23 ozs) 25A VRRM 650V to 1000V 0.92V Max 1.0 µA 150ºC IFSM IR VF SEMICONDUCTOR RoHS RoHS Page 1 of 3 Avalanche Glass Passivated Single-Phase Bridge Rectifier Nell High Power Products Compliant to RoHS High surge current capability Low thermal resistance Small thermal resistance rectification for switching power supply, field supply for DC motor, home appliances, white-goods applications, power supply for Telecom, ADVANTAGE TJ max. 400A 25A/600V Isolation voltage up to 2500V International standard package High heat-conduction rate Low temperature rise All dimensions in millimeters www.nellsemi.com + ~ ~ 30±0.3 Ø3.2±0.2 20±0.317.5±0.2 5±0.2 4±0.2 0.5±0.1 0.5±0.1 60°±5° 2.5±0.2 2.2±0.2 1±0.1 3.6±0.1 11.2±0.2 4.6±0.1 2.7±0.1 0.65±0.05 + ~ ~ High temperature soldering guaranteed : GBJ2506A 260°C/10 second, 2.3kg tension force Controlled avalanche series Glass passivated chip junction Low forward voltage drop desktop PC and server switching mode power supply.
MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER V V SYMBOL GBJ2506A UNIT 700 600 1100 V Minimum repetitive peak reverse voltage Peak reverse non-repetitive voltage Maximum avalanche breakdown at 10voltage µA Maximum average forward rectified output current, T = 105°C c Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range VRRM VRSM IFSM IF(AV) VISO 2I t 2500 800 -40 to 150 400 2A s A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)A PARAMETER V µA SYMBOL GBJ2506A UNIT Instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking VF IR 150 0.89 0.2 voltage per diod TEST CONDITIONS I = 12.5AF T = 25°CA T = 125°CA THERMAL AND MECHANICAL (T = 25°C unless otherwise noted)A PARAMETER °C/W SYMBOL GBJ2506A UNIT Typical thermal resistance (1) With heatsink, single side heat dissipation, half sine wave. (1)RθJC 0.8 Notes Storage temperature range TSTG -40 to 150 ºC TJ TEST CONDITIONS junction to case Single-side heat dissipation, sine half wave Mounting ± 10 % to heatsink M3 A mounting compound is recommended and the torque should be rechecked after a for the spread period of 3 hours to allow of the compound. 0.8 .N m Approximate weight 6.5 torque g - Product type : “GBJ” Package,1Ø Bridge - Voltage code : code x 100 = VRRM I rating : "25" for 25AF(AV) Ordering Information Tabel Page 2 of 3www.nellsemi.com - " " for avalanche type, Minimum avalanche breakdown voltage = V + 50VRRMA Maximum avalanche breakdown voltage = V + 500VRRM Device code GBJ A25 06 421 3 GBJ2506A Minimum avalanche breakdown voltage at 10µA VBR VBR 650 V TYP. MAX. 0.92 2.0
Fig.1 Derating curve for output rectified current Average forward output current (A) Case temperature (°C) 0 40 100 140 Fig.2 Maximum non-repetitive peak forward surge current per bridge element Average output current (A) 100 200 300 400 1 10 100 Number of cycles at 50H z Fig.3 Typical reverse characteristics per bridge element Instantaneous reverse current (μA) Percent of rated peak reverse voltage (%) 100 1.0 0.1 0.01 0 20 40 60 80 100 Fig.4 Typical forward characteristics per bridge element 100 1.0 0.1 Instantaneous forward current, amperes (A) Forward voltage (v) 20 60 80 120 160 Page 3 of 3www.nellsemi.com GBJ2506A T = 25°CJ With heatsink T = 125°C A T = 25°C A T = 25°CA T = 125°CA