GAE100BA60 SANREX | Alldatasheet
Document overview
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Technical content
SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across IGBT. IC 100A V CES 600V VCES sat 2.3V Typ tf 0.10 s Typ Soft recovery diode
Applications
Brake for motor control (VVVF) Unit mm Maximum Ratings Unless otherwise Tj 25 Symbol Item VCES Collector-Emitter Voltage Conditions with gate terminal shorted to emitter Ratings GAE100BA60 Unit V600 VGES Gate-Emitter Voltage with collector shorted to emitter V20 Ic Collector Current DC Pulse ms A100 ICP 200 Ic Reverse Collector Current A100 PT Total Power Dissipation Tc 25 W400 Tj Junction Temperature 150 Tstg Storage Temperature 40 125 Mounting Torque Mounting 6 Terminal 5 Recommended Value 2.5 3.9 25 40 N m kgf cm 4.7 48 Recommended Value 1.5 2.5 15 25 2.7 28 Mass Typical Value g210
Electrical Characteristics
Min. Typ. Max. Unit nA500 ICES Collector Cut-Off Current VCE 600V VGE 0V mA1.00 V BR CES Collector-Emitter Breakdown Voltage VGE 0V Ic mA V600 VGE th Gate Threshold Voltage VCE 10V Ic 10mA V3.0 2.30 7.00 VCE sat Collector-Emitter Saturation Voltage Ic 100A VGE 15V V 7.00 2.80 Cies Input Capacitance VCE 10V VGE 0V f 1MHz nF 0.10 10.00 tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time Ic 100A VGE 15V/ 5V Vcc 300V RG 6 s 0.20 0.20 td on 0.10 0.40 tf Emitter-Collector Voltage 0.40 0.20 td off 2.00 0.80 VECS Ic 100A VGE 0V V 0.10 2.80 trr Reverse Recovery Time Ic 100A VGE 10V di /dt 200A/ s s0.15 2.00VFM Forward Voltage Drop IF 100A, Clamp Diode 2.80 0.10trr Reverse Recovery Time IF 100A diF /dt 200A/ s, Clamp Diode 0.15 Rth j-c Thermal Impedance Clamp Diode 0.55 Rth j-c Thermal Resistance IGBT-Case V s 0.31 Diode-Case 0.55 UL;E76102 M