SGW50N60HS_09 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.3 Nov 09 High Speed IGBT in NPT-technology

  • 30% lower Eoff compared to previous generation
  • Short circuit withstand time – 10 µs
  • Designed for operation above 30 kHz
  • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
  • High ruggedness, temperature stable behaviour
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC 1 for target applications
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff25 Tj Marking Package SGW50N60HS 600V 50A 0.88mJ 150°C G50N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 100 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 150 A Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω start TJ=25°C EAS 280 mJ Gate-emitter voltage static transient ( tp<1µs, D<0.05) VGE ±20 ±30 V Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 416 W Operating junction and storage temperature Tj , Tstg -55...+150 Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2.3 Nov 09 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.3 K/W Thermal resistance, junction – ambient RthJA 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =50A Tj =25 °C Tj =150 °C 2.8 3.15 3.15 Gate-emitter threshold voltage VGE(th) IC =1mA, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 3000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =50A - 31 - S Dynamic Characteristic Input capacitance Ciss - 2572 - Output capacitance Coss - 245 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 158 - pF Gate charge QGate VCC =480V, IC =50A VGE =15V - 179 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤10 µs VCC ≤ 600V, Tj ≤ 150 °C - 471 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3 Rev. 2.3 Nov 09 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 47 - Rise time tr - 32 - Turn-off delay time td(off) - 310 - Fall time tf - 16 - ns Turn-on energy Eon - 1.08 - Turn-off energy Eoff - 0.88 - Total switching energy Ets Tj =25 °C, VCC =400V, IC =50A, VGE =0/15V, RG =6.8 Ω Lσ 1) =55nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery2). - 1.96 - mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 50 - Rise time tr - 28 - Turn-off delay time td(off) - 225 - Fall time tf - 14 - ns Turn-on energy Eon - 1 - Turn-off energy Eoff - 0.90 - Total switching energy Ets Tj =150 °C VCC =400V, IC =50A, VGE =0/15V, RG = 1.8 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery 2). - 1.9 - mJ Turn-on delay time td(on) - 48 - Rise time tr - 31 - Turn-off delay time td(off) - 350 - Fall time tf - 20 - ns Turn-on energy Eon - 1.5 - Turn-off energy Eoff - 1.1 - Total switching energy Ets Tj =150 °C VCC =400V, IC =50A, VGE =0/15V, RG = 6.8 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery2). - 2.6 - mJ 1 Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.

2 Diode used in this test is IDP45E60

Power Semiconductors 9 Rev. 2.3 Nov 09

Power Semiconductors 10 Rev. 2.3 Nov 09 Figure A. Definition of switching times Figure B. Definition of switching losses p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =55nH and Stray capacity Cσ =40pF.

Power Semiconductors 11 Rev. 2.3 Nov 09 Published by Infineon Technologies AG

81726 Munich, Germany

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