G20N60HS

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Power Semiconductors 1 Rev.2 Aug-02 High Speed IGBT in NPT-technology

• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers: - parallel switching capability - moderate E off increase with temperature - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Package Ordering Code SGP20N60HS 600V 20 240µJ 150°C TO220AB Q67040-S4498 SGW20N60HS 600V 20 240µJ 150°C TO-247AC Q67040-S4499 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 80 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 80 A Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C EAS 115 mJ Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 178 W Operating junction and storage temperature Tj , Tstg -55...+150 Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-247-3-1 (TO-247AC) P-TO-220-3-1 (TO-220AB)

Power Semiconductors 2 Rev.2 Aug-02 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.7 Thermal resistance, junction – ambient RthJA TO-220AB TO-247AC K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =20A Tj =25 °C Tj =150 °C 2.8 3.5 3.15 4.00 Gate-emitter threshold voltage VGE(th) IC =500 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 2500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =20A -1 4 S Dynamic Characteristic Input capacitance Ciss - 1100 Output capacitance Coss - 105 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -6 4 pF Gate charge QGate VCC =480V, IC =20A VGE =15V - 100 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-247AC - 13 nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 170 A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3 Rev.2 Aug-02 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -1 8 Rise time tr -1 5 Turn-off delay time td(off) - 207 Fall time tf -1 3 ns Turn-on energy Eon -0 . 3 9 Turn-off energy Eoff -0 . 3 0 Total switching energy Ets Tj =25 °C, VCC =400V, IC =20A, VGE =0/15V, RG =16 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -0 . 6 9 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -1 5 Rise time tr -8 . 5 Turn-off delay time td(off) -6 5 Fall time tf -3 5 ns Turn-on energy Eon -0 . 4 6 Turn-off energy Eoff -0 . 2 4 Total switching energy Ets Tj =150 °C VCC =400V, IC =20A, VGE =0/15V, RG = 2.2 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -0 . 7 mJ Turn-on delay time td(on) -1 7 Rise time tr -1 3 Turn-off delay time td(off) - 222 Fall time tf -1 3 ns Turn-on energy Eon -0 . 6 Turn-off energy Eoff -0 . 3 6 Total switching energy Ets Tj =150 °C VCC =400V, IC =20A, VGE =0/15V, RG = 16 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -0 . 9 6 mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to test circuit in Figure E.

Power Semiconductors 9 Rev.2 Aug-02 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

Power Semiconductors 10 Rev.2 Aug-02 Figure A. Definition of switching times Figure B. Definition of switching losses p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF. Published by Infineon Technologies AG,

Power Semiconductors 11 Rev.2 Aug-02 Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.