SGP20N60_09 INFINEON | Alldatasheet

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Technical content

1 Rev. 2.4 Nov 09 Fast IGBT in NPT-technology

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Qualified according to JEDEC 1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat) Tj Marking Package SGP20N60 600V 20A 2.4V 150°C G20N60 PG-TO-220-3-1 SGW20N60 600V 20A 2.4V 150°C G20N60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 80 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 80 A Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C EAS 115 mJ Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 179 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Ts 260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-220-3-1 PG-TO-247-3

2 Rev. 2.4 Nov 09 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.7 Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =20A Tj =25 °C Tj =150 °C 1.7 2.4 2.4 2.9 Gate-emitter threshold voltage VGE(th) IC =700 µA, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 2500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =20A - 14 - S Dynamic Characteristic Input capacitance Ciss - 1100 1320 Output capacitance Coss - 107 128 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 63 76 pF Gate charge QGate VCC =480V, IC =20A VGE =15V - 100 130 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO-220-3-1 PG-TO-247-3-21 nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤10 µs VCC ≤ 600V, Tj ≤ 150 °C - 200 - A 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

3 Rev. 2.4 Nov 09 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 225 270 Fall time tf - 54 65 ns Turn-on energy Eon - 0.44 0.53 Turn-off energy Eoff - 0.33 0.43 Total switching energy Ets Tj =25 °C, VCC =400V, IC =20A, VGE =0/15V, RG =16 Ω, Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 0.77 0.96 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 250 300 Fall time tf - 63 76 ns Turn-on energy Eon - 0.67 0.81 Turn-off energy Eoff - 0.49 0.64 Total switching energy Ets Tj =150 °C VCC =400V, IC =20A, VGE =0/15V, RG =16 Ω, Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 1.12 1.45 mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

9 Rev. 2.4 Nov 09 PG-TO220-3-1

10 Rev. 2.4 Nov 09

11 Rev. 2.4 Nov 09 Figure A. Definition of switching times Figure B. Definition of switching losses p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =900pF.

12 Rev. 2.4 Nov 09 Published by Infineon Technologies AG

81726 Munich, Germany

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