IGB15N60T_15 INFINEON | Alldatasheet
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TRENCHSTOP™ Series q IFAG IPC TD VLS 1 Rev. 2.6 30.04.2015 Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IGB15N60T 600V 15A 1.5V 175C G15T60 PG-TO263-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tj ≥ 25C VCE 600 V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire TC = 100C IC 23 A Pulsed collector current, tp limited by Tjmax IC p ul s 45 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 45 Gate-emitter voltage VGE 20 V Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C tSC 5 s Power dissipation TC = 25C Pt o t 130 W Operating junction temperature Tj -40...+175 C Storage temperature Ts t g -55...+150 Soldering temperature (reflow soldering, MSL1) 260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO263-3
TRENCHSTOP™ Series q IFAG IPC TD VLS 2 Rev. 2.6 30.04.2015 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 1.15 K/W Thermal resistance, junction – ambient Rt h J A 6cm² Cu 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VGE =0V, IC =0.2 mA 600 - - V Collector-emitter saturation voltage VC E ( s a t ) VGE = 15V, IC =1 5A Tj =25 C Tj =1 75C 1.5 1.9 2.05 Gate-emitter threshold voltage VG E ( t h) IC =210µ A,VCE =VGE 4.1 4.9 5.7 Zero gate voltage collector current IC E S VCE =600V , VGE =0V Tj =25 C Tj =1 75C 1000 µA Gate-emitter leakage current IG E S VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =1 5A - 8.7 - S Integrated gate resistor RG i n t - Ω Dynamic Characteristic Input capacitance Ci s s VCE =25V, VGE =0V, f=1MHz - 860 - pF Output capacitance Co s s - 55 - Reverse transfer capacitance Cr s s - 24 - Gate charge QG a t e VCC =480V, IC =15A VGE =15V - 87 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 7 - nH Short circuit collector current1) IC ( S C ) VGE =15V, tSC 5s VC C = 400V, Tj = 1 50C - 137.5 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
TRENCHSTOP™ Series q IFAG IPC TD VLS 3 Rev. 2.6 30.04.2015 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=25 C, VCC =400 V, IC =15 A, VGE =0/15V, rG =15 , L=154 nH, C=39 pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW30N60T - 17 - ns Rise time tr - 11 - Turn-off delay time td ( o f f ) - 188 - Fall time tf - 50 - Turn-on energy Eon - 0.22 - mJ Turn-off energy Eo f f - 0.35 - Total switching energy Ets - 0.57 - Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=17 5C, VCC =400 V, IC =15 A, VGE =0/15V, rG =15 , L=154 nH, C=39 pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW30N60T - 17 - ns Rise time tr - 15 - Turn-off delay time td ( o f f ) - 212 - Fall time tf - 79 - Turn-on energy Eon - 0.34 - mJ Turn-off energy Eo f f - 0.47 - Total switching energy Ets - 0.81 -
Figure 21. IGBT transient thermal
TRENCHSTOP™ Series q IFAG IPC TD VLS 10 Rev. 2.6 30.04.2015 PG-TO263-3
TRENCHSTOP™ Series q IFAG IPC TD VLS 11 Rev. 2.6 30.04.2015 I r r m 90% I r r m 10% I r r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n T C r r r r rr Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses
TRENCHSTOP™ Series q IFAG IPC TD VLS 12 Rev. 2.6 30.04.2015 Published by Infineon Technologies AG
81726 Munich, Germany
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