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BZG03C TAYCHIPST | Alldatasheet

Document overview

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Technical content

10V-270V 3.0A 1 of 2 Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MECHANICAL DATA High reliability Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads Wave and reflow solderable Glass passivated junction Case:JEDEC DO-214AC(SMA) Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathods end Mounting position: any Weight: 0.002 ounces, 0.064 grams BZG03C Series Silicon Z–Diodes

ORDERING INFORMATION

BZG03C-series BZG03C-s eries-TR 1500 (7" reel) BZG03C-series BZG03C -series-TR3 6000 (13" reel) 6000/box ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation R thJA < 25 K/W, T amb = 100 °C P tot 3000 mW R thJA < 100 K/W, T amb = 50 °C P tot 1250 mW Non repetitive peak surge power dissipation t p = 100 μs sq.pulse, T j = 25 °C pior to surge P ZSM 600 W Junction to lead R thJL

25 K/W

Mounted on epoxy-glass hard tissue, fig. 1b R thJA

150 K/W

Mounted on epoxy-glass hard tissue, fig. 1b R thJA

125 K/W

Mounted on Al-oxid-ceramic (Al O ), fig. 1b R thJA

100 K/W

j 150 °C Storage temperature range T stg - 65 to + 150 °C Forward voltage (max.) I F = 0.5 A V F 1.2 V

Web Site: www.taychipst.comE-mail: sales@taychipst.com 10V-270V 3.0A BZG03C Series Silicon Z–Diodes I ZT VV V Ω Ω m A %/K %/K µ A V BZG03C30 G30 28 30 32 8.0 15 25 0.06 0.11 1.0 22 BZG03C33 G33 31 33 35 8.0 15 25 0.06 0.11 1.0 24 BZG03C36 G36 34 36 38 21 40 10 0.06 0.11 1.0 27 BZG03C39 G39 37 39 41 21 40 10 0.06 0.11 1.0 30 BZG03C43 G43 40 43 46 24 45 10 0.07 0.12 1.0 33 BZG03C47 G47 44 47 50 24 45 10 0.07 0.12 1.0 36 BZG03C51 G51 48 51 54 25 60 10 0.07 0.12 1.0 39 BZG03C56 G56 52 56 60 25 60 10 0.07 0.12 1.0 43 BZG03C62 G62 58 62 66 25 80 10 0.08 0.13 1.0 47 BZG03C68 G68 64 68 72 25 80 10 0.08 0.13 1.0 51 BZG03C75 G75 70 75 79 30 100 10 0.08 0.13 1.0 56 BZG03C82 G82 77 82 87 30 100 10 0.08 0.13 1.0 62 BZG03C91 G91 85 91 96 60 200 5 0.09 0.13 1.0 68 BZG03C100 G100 94 100 106 60 200 5 0.09 0.13 1.0 75 BZG03C110 G110 104 110 116 80 250 5 0.09 0.13 1.0 82 BZG03C120 G120 114 120 127 80 250 5 0.09 0.13 1.0 91 BZG03C130 G130 124 130 141 110 300 5 0.09 0.13 1.0 100 BZG03C150 G150 138 150 156 130 300 5 0.09 0.13 1.0 110 BZG03C160 G160 158 160 171 150 350 5 0.09 0.13 1.0 120 BZG03C180 G180 168 180 191 180 400 5 0.09 0.13 1.0 130 BZG03C200 G200 188 200 212 200 500 5 0.09 0.13 1.0 150 BZG03C220 G220 208 220 233 350 750 2 0.09 0.13 1.0 160 BZG03C240 G240 228 240 256 400 850 2 0.09 0.13 1.0 180 BZG03C270 G270 251 270 289 450 1000 2 0.09 0.13 1.0 200

ELECTRICAL CHARACTERISTICS

A =25℃) Reverse leakage current Zener voltage range V Z Type Device marking code Dynamic resistance Temperature coefficient of zener voltage r zj ZT TK VZ ZT IR@VR

RATINGS AND CHARACTERISTIC CURVES BZG03C Series 2 of 2 Web Site: www.taychipst.comE-mail: sales@taychipst.com 10V-270V 3.0A BZG03C Series Silicon Z–Diodes Fig. 3 - Fig. 2 - Total Power Dissipation vs. Ambient Temperature Forward Current vs. Forward Voltage Non Repetitive Surge Power Dissipation vs. Pulse Length Thermal Response 0.5 1.5 2.5 3.5 94 9580 25 50 75 100 125 P tot - Total Power Dissipation (W) T amb - Ambient Temperature (°C) 150 R thJA = 100 K/W R thJA = 25 K/W 0 0.5 1.0 1.5 0.5 1.0 1.5 2.0 3.0 2.0 94 9581 I F - Forward Current (A) V F - Forward Voltage (V) 2.5 0.01 0.1 1 10 100 1000 10 000 P ZSM N on-Repetiti v e S u rge Po w er Dissipation ( W t p - P u lse Length (ms) 100 94 9582 100 1000 Z thp - Thermal Resistance for P u lse Cond. (K/ W t p - P u lse Length (s) 94 9583 t p /T = 0.5 t p /T = 0.2 t p /T = 0.1 t p /T = 0.05 t p /T = 0.02 t p /T = 0.01