SGB10N60A_07 INFINEON | Alldatasheet

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Technical content

1 Rev. 2.3 July 07 Fast IGBT in NPT-technology

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Qualified according to JEDEC 1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat) Tj Marking Package SGB10N60A 600V 10A 2.3V 150°C G10N60A PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 10.6 Pulsed collector current, tp limited by Tjmax ICpuls 40 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 40 A Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C EAS 70 mJ Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 92 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature (reflow soldering MSL1) 245

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-263-3-2

2 Rev. 2.3 July 07 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.35 Thermal resistance, junction – ambient1) RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =10A Tj =25 °C Tj =150 °C 1.7 2.3 2.4 2.8 Gate-emitter threshold voltage VGE(th) IC =300 µA, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 1500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =10A - 6.7 - S Dynamic Characteristic Input capacitance Ciss - 550 660 Output capacitance Coss - 62 75 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 42 51 pF Gate charge QGate VCC =480V, IC =10A VGE =15V - 52 68 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤10 µs VCC ≤ 600V, Tj ≤ 150 °C - 100 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

3 Rev. 2.3 July 07 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 28 34 Rise time tr - 12 15 Turn-off delay time td(off) - 178 214 Fall time tf - 24 29 ns Turn-on energy Eon - 0.15 0.173 Turn-off energy Eoff - 0.17 0.221 Total switching energy Ets Tj =25 °C, VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω, Lσ =180nH, Cσ =55pF Energy losses include “tail” and diode reverse recovery. - 0.320 0.394 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 28 34 Rise time tr - 12 15 Turn-off delay time td(off) - 198 238 Fall time tf - 26 32 ns Turn-on energy Eon - 0.260 0.299 Turn-off energy Eoff - 0.280 0.364 Total switching energy Ets Tj =150 °C VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω Lσ 1) =180nH, Cσ 1) =55pF Energy losses include “tail” and diode reverse recovery. - 0.540 0.663 mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

9 Rev. 2.3 July 07 PG-TO263-3-2

10 Rev. 2.3 July 07 Figure A. Definition of switching times Figure B. Definition of switching losses p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =55pF. PG-TO247-3-1

11 Rev. 2.3 July 07 Edition 2006-01 Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 7/11/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.