G03H1202

IGA03N120H2 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Mar-04, Rev. 2.0 HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection
• 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - E off optimized for IC =3A - simple Gate-Control P-TO220-3-31 (FullPAK) P-TO220-3-34 (FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff Tj,max Marking Package Ordering Code IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648 IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz ICpk 8.2 Pulsed collector current, tp limited by Tjmax ICpuls 9 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 9 A Gate-emitter voltage VGE ±20 V Power dissipation TC = 25°C Ptot 29 W Operating junction and storage temperature Tj , Tstg -40...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 G C E

Power Semiconductors 2 Mar-04, Rev. 2.0 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 4.3 Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =300 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =3A Tj =25 °C Tj =150 °C VGE = 10V, IC =3A, Tj =25 °C 2.2 2.5 2.4 2.8 Gate-emitter threshold voltage VGE(th) IC =90 µ A, VCE =VGE 2.1 3 3.9 V Zero gate voltage collector current ICES VCE =1200V, VGE =0V Tj =25 °C Tj =150 °C µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =3A - 2 - S Dynamic Characteristic Input capacitance Ciss - 205 - Output capacitance Coss - 24 - Reverse transfer capacitance Crss VCE =25V VGE =0V f=1MHz - 7 - pF Gate charge QGate VCC =960V, IC =3A VGE =15V - 8.6 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE P-TO-220-3-31 nH

Power Semiconductors 3 Mar-04, Rev. 2.0 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.2 - Rise time tr - 5.2 - Turn-off delay time td(off) - 281 - Fall time tf - 29 - ns Turn-on energy Eon - 0.14 - Turn-off energy Eoff - 0.15 - Total switching energy Ets Tj =25 °C VCC =800V, IC =3A VGE =0V/15V RG =82 Ω Lσ 1) =180nH Cσ 1) =40pF Energy losses include “tail” and diode 2) reverse recovery. - 0.29 - mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 9.4 - Rise time tr - 6.7 - Turn-off delay time td(off) - 340 - Fall time tf - 63 - ns Turn-on energy Eon - 0.22 - Turn-off energy Eoff - 0.26 - Total switching energy Ets Tj =150 °C VCC =800V, IC =3A VGE =0V/15V RG =82 Ω Lσ 1) =180nH Cσ 1) =40pF Energy losses include “tail” and diode2) reverse recovery. - 0.48 - mJ Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff VCC =800V, IC =3A VGE =0V/15V RG =82 Ω , C r 1) =4nF Tj =25 °C Tj =150 °C 0.05 0.09 mJ 1 ) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 2 ) Commutation diode from device IKP03N120H2

Power Semiconductors 9 Mar-04, Rev. 2.0 TO-220-3-31 (FullPAK) dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 13.47 13.73 0.5304 0.5404 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 TO-220-3-34 (FullPAK) dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 8.28 8.79 0.326 0.346 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 U 5.00 typ. 0.197 typ. 1: Gate 2: Collector 3: Emitter

Power Semiconductors 10 Mar-04, Rev. 2.0 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.