FX901 SANYO | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting. Electrical Connection
- Marking:901 Specifications Absolute Maximum Ratings at Ta = 25˚C Continued on next page. Tc=25˚C, 1 unit Mounted on ceramic board (750mm2·0.8mm) 1 unit Mounted on ceramic board (750mm2·0.8mm)
No.5387-2/5 Continued from preceding page. Electrical Characteristics at Ta = 25˚C retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ]RT[ tnerruCffotuCrotcelloCI OBC V BC I,V21–= E 0=1 .0–A µ tnerruCffotuCrettimEI OBE V BE I,V6–= C 0=1 .0–A µ niaGtnerruCCD h EF )1(V EC I,V2–= C A5.0–=0 410 65 h EF )2(V EC I,V2–= C A3–=0 7 tcudorPhtdiwdnaB-niaGf T V EC I,V2–= C A3.0–=0 04z HM ecnaticapaCtuptuOb oCV BC zHM1=f,V01–=6 2F p egatloVnoitarutaSE-CV )tas(EC IC I,A5.1–= B Am03–=2 2.0–4 .0–V egatloVnoitarutaSE-BV )tas(EB IC I,A5.1–= B Am03–=9 .0–2 .1–V egatloVnwodkaerBB-CV OBC)RB( IC I,Aµ01–= E 0=5 1–V egatloVnwodkaerBE-CV OEC)RB( IC R,Am1–= EB =¥ 11–V egatloVnwodkaerBB-EV OBE)RB( IE I,Aµ01–= C 0=7 –V emitNO-nruTt no tiuctiCtseTdeificepseeS5 2s n emiTegarotSt gts tiucriCtseTdeificepseeS0 02s n emiTllaFt f tiucriCtseTdeificepseeS0 1s n ]TEFSOM[ egatloVnwodkaerBS-DV SSD)RB( ID V,Am1= SG 0=1 1V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V4.01= SG 0=0 04A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V8±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01= D Am1=5 .05 .1V ecnattimdArefsnarTdrawroFY | sf |V SD I,V01= D A1=8 .18 .2S ecnatsiseR-NOecruoS-ot-niarDcitatS R )no(SD ID V,A1= SG V4=0 410 02m W R )no(SD ID V,Am005= SG V5.2=0 020 23m W ecnaticapaCtupnIs siCV SD zHM1=f,V01=5 81F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=0 12F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 4F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS5 1s n emiTesiRt r tiucriCtseTdeificepseeS0 4s n emITyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 5s n emiTllaFt f tiucriCtseTdeificepseeS5 3s n ]DBS[ egatloVdrawroFV F IF Am005=4 .05 4.0V emiTyrevoceResreveRt rr IF sµ/A05=td/id,Am005=0 20 3s n Swithing Time Test CIrcuit [TR] Trr Test Circuit [MOSFET]
No.5387-3/5
No.5387-4/5
PS No.5387-5/5 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.