FX851 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Composite type composed of a low ON-resistance P- channel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates high- density mounting.
  • The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P, placed in one package. Electrical Connection
  • Marking:851 retemaraPl obmySs noitidnoCs gnitaRt inU ]TEFSOM[ egatloVecruoS-ot-niarDV SSD 03–V egatloVecruoS-ot-etaGV SSG 51±V )CD(tnerruCniarDI D 1–A )esluP(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %14 –A noitapissiDrewoPelbawollA PD 6W PD 5.1W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– ]DBS[ egatloVesreveRkaePevititepeRV MRR 03V egatloVegruSesreveRkaePevititeper-noNV MSR 53V tnerruCdeifitceRegarevAI O 007A m tnerruCdrawroFegruSI MSF elcyc1,evaweniszH05 5A erutarepmeTnoitcnuJj T 521+ot55– erutarepmeTegarotSg tsT 051+ot55– Specifications Absolute Maximum Ratings at Ta = 25˚C Continued on next page. Tc=25˚C Mounted on ceramic board (750mm2·0.8mm) 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view)

No.4891-2/4 Continued from preceding page. Electrical Characteristics at Ta = 25˚C retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ]TEFSOM[ egatloVnwodkaerBS-DV SSD)RB( ID V,Am1–= SG 0=0 3–V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03–= SG 0=0 01–A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V21±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01–= D Am1–=0 .1–0 .2–V ecnattimdArefsnarTdrawroFY | sf |V SD I,V01–= D Am005–=6 .00 .1S ecnatsiseRetatS-NOecruoS-ot-niarDcitatS R )no(SD ID V,Am005–= SG V01–=5 .05 7.0 W R )no(SD ID V,Am005–= SG V4–=5 7.01 .1 W ecnaticapaCtupnIs siCV SD zHM1=f,V01–=0 71F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01–=0 11F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01–=0 2F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS0 1s n emiTesiRt r tiucriCtseTdeificepseeS3 1s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 7s n emiTllaFt f tiucriCtseTdeificepseeS0 3s n egatloVdrawroFedoiDV DS IS V,A1–= SG 0=9 .0–V ]DBS[ egatloVesreveRV R IR Aµ003=0 3V egatloVdrawroFV F IF Am007= 55.0V tnerruCesreveRI R VR V51= 08A µ ecnaticapaClanimretretnIC V R elcyCzHM1=f,V01=6 2F p emiTyrevoceResreveR rrtI F I= R tiucrICtseTdeificepseeS,Am001= 01s n ecnatsiseRlamrehT a-jhtR 001 ˚C/WMounted on ceramic board (750mm2·0.8mm) Switching Time Test CIrcuit [MOSFET]Trr Test Circuit [SBD]

No.4891-3/4

PS No.4891-4/4 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.