FT03P10E GWSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 4

Technical content

Plastic-Encapsulate MOSFETS GENERAL DESCRIPTION FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -100 Gate-Source Voltage V GS ±20 V Continuous Drain Current I D Pulsed Drain Current(note1) I DM -10 A Thermal Resistance from Junction to Ambient(note3) R θJA ℃/W EQUIVALENT CIRCUIT V (BR)DSS R DS(on) MAX I D -100V -3A190mΩ@-10V SOT-223 1. GATE 2. DRAIN 3. SOURCE 1 2 Operation Junction and Storage Temperature Range TJ,TSTG -55 ~+150 210mΩ@-4.5V Power Dissipation(note3) P D W 3.1 This FT03P10E use advanced trench technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications. DS(ON) P-Channel Power MOSFET FT03P10E

Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =-250µA -100 V Zero gate voltage drain current I DSS VDS =-100V,VGS = 0V,TJ=25℃ -1 µA Gate-source leakage current I GSS VGS =±20V, VDS = 0V ±100 nA On characteristics VGS =-10V, ID =-3A 190 mΩ VGS =-4.5V, ID =-1A 210 mΩ Drain-source on-resistance (note 3) R DS(on) Forward transconductance g FS VDS =-5V, ID =-3A S Gate threshold voltage V GS(th) VDS =VGS, ID =-250µA -1 -3 V Dynamic Characteristics (note 4) Input capacitance C iss pF Output capacitance C oss pF Reverse transfer capacitance C rss VDS =-25V,VGS =0V,f =1MHz pF Switching Characteristics (note 4) Turn-on delay time t d(on) ns Turn-on rise time t r ns Turn-off delay time t d(off) 100 ns Turn-off fall time t f VGS=-10V,VDS=-50V, ID=-2.6A,RGEN=25Ω (note 1,2) ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V SD IS=-1A,VGS=0V -1.2 V Note : 1. Pulse width<300us, Duty cycle<2%. Essentially independent of operating temperature typical characteristics. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper. 4. Guaranteed by design, not su bject to production testing. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified VDS =-100V,VGS = 0V,T J=125℃ -1 mA Total Gate Charge Q g VDS=-25V,ID=-2.6A, VGS=4.5V (note 1,2) nC Gate-Source Charge Q gs nC Gate-Drain Charge Q gd nC 3.5 4.6 Continuous drain-source diode forward current -3 A Pulsed drain-source diode forward current(note 1) -10 A IS ISM 1419 -0.75 153 166 -1.75 170 2500 Gate resistance Rg 16 pF VDS =0V,VGS =0V,f =1MHz 200 P-Channel Power MOSFET FT03P10E

-10 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -1 -2 -0.1 -2 -4 -6 -8 -10 100 150 200 250 300 350 -0 -1 -2 -3 -4 120 140 160 180 200 -0 -1 -2 -3 -4 -5 -10 V DS = -5V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T J =25 Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) -0.3 T J =125 T J =25 V SD Pulsed SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) I S T J =125 R DS(ON) —— V GS ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) T J =25 ID=-3A Pulsed V GS = -4.5V T J =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) V GS = -10V V GS =-3V T J =25 Pulsed V GS =-2.5V V GS Output Characteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Typical Characteristics P-Channel Power MOSFET FT03P10E

Min. Max. Min. Max. A1 0.020 0.100 0.001 0.004 A2 1.500 1.700 0.059 0.067 b 0.660 0.840 0.026 0.033 b1 2.900 3.100 0.114 0.122 c 0.230 0.350 0.009 0.014 D 6.300 6.700 0.248 0.264 E 6.700 7.300 0.264 0.287 E1 3.300 3.700 0.130 0.146 e θ 0° 10° 0° 10° Symbol Dimensions In Millimeters Dimensions In Inches 2.300(BSC) 0.091(BSC) P-Channel Power MOSFET FT03P10E Plastic surface mounted package; 3 leads SOT-223 PACKAGE OUTLINE