FSS264

FSS264 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 4A Drain Current (PW≤10s) I D Duty cycle≤1% 5 A Drain Current (PW≤10µs) I DP Duty cycle≤1% 16 A Allowable Power Dissipation P D Mounted on a ceramic board (1200mm25 0.8mm) PW ≤10s 2.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 100 V Zero-Gate Voltage Drain Current I DSS VDS =100V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =2A 3.0 5.5 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =2A, VGS =10V 65 85 m Ω R DS (on)2 I D =2A, VGS =4V 80 112 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 1560 pF Output Capacitance Coss V DS =20V, f=1MHz 130 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 83 pF Turn-ON Delay Time t d(on) See specified Test Circuit 16 ns Rise Time t r See specified Test Circuit 25 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 155 ns Fall Time t f See specified Test Circuit 66 ns Marking : S264 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. D2005PA MS IM TB-00001963 FSS264 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0267-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =50V, VGS =10V, ID =4A 34 nC Gate-to-Source Charge Qgs V DS =50V, VGS =10V, ID =4A 5.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =50V, VGS =10V, ID =4A 6 nC Diode Forward Voltage V SD IS=4A, VGS =0V 0.81 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7005-002 5.0 4.4 6.0 0.3 1.5

1.8 MAX

0.10.595 1.27 0.20.43 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G S ID =2A R L=25Ω VDD =50V VOUTVIN D FSS264 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V R DS (on) -- Ta Ambient Temperature, Ta -- °C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 3.0V 6.0V 10.0V4.0V V DS =10V --25 Ta=75 200 100 150 200 100 150 0 2 4 6 8 1 01 21 41 6 IT10020 IT10021 IT10022 IT10023 Ta=25°C ID =2A 8.0V - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 V GS=4V , I D=2A V GS=10V , I D=2A V GS =2.5V

No. A0267-3/4 0.1 1.0 7532753275320.01 0.1 1.0 10 0.01 0.1 1.0 0.001 - -25 Ta=75 1000 100 0 1 02 03 04 05 0 60 Ciss Coss Crss 05 1 0 15 20 25 30 35 V DS =50V ID =4A IT10024 IT10025 IT10027 IT10028 V DS =10V f=1MHz V GS =0V Ta= - -25 75°C 0.1 1.0 23 5 723 5 7 100 IT10026 td(off) td(on) V DD =50V V GS =10V tf tr IT10030 IT10029 25°C 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 0.123 5 7 23 1.057 2 3 1057 2 3 10057 2 0.1 0.01 0.01 1.0 Operation in this area is limited by RDS (on). DC operation IDP =16A ID =4A <10µs 1ms 10s 10ms 100ms yfs -- ID Drain Current, ID -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Qg -- VGS PD -- Ta Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V SW Time -- ID Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (1200mm 25 0.8mm) Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (1200mm 250.8mm) PW ≤10s

No. A0267-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. Note on usage : Since the FSS264 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.