FSS250 SANYO | Alldatasheet

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Technical content

Features

  • Low ON resistance.
  • 4V drive.
  • Ultrahigh-speed switching. 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Continued on next page. Mounted on a ceramic board (1000mm2·0.8mm) Marking : S250 retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 02±V )CD(tnerruCniarDI D 7A )eslup(tnerruCniarDI PD WP £ elcycytud,sµ01 £ %12 5A noitapissiDrewoPelbawollAP D 8.1W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03= SG 0=1 A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V61±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01= D Am1=0 .14 .2V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A7=7 0 1S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R )no(SD 1I D V,A7= SG V01=5 23 3m W R )no(SD 2I D V,A4= SG V5.4=8 34 5m W ecnaticapaCtupnIs siCV SD zHM1=f,V01=0 35F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=0 71F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 9F p

No.6269-2/4 FSS250 Switching Time Test Circuit Continued from preceding page. PW =10µs D.C.≤1% 10V VIN P. G 50Ω G S ID =7A R L=2.1Ω VDD =15V VOUTVIN D FSS250 retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS9 s n emiTesiRt r tiucriCtseTdeificepseeS0 31s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 4s n emiTllaFt f tiucriCtseTdeificepseeS0 6s n egrahCetaGlatoTg QV SD V,V01= SG I,V01= D A7=0 1C n egrahCecruoS-ot-etaGs gQV SD V,V01= SG I,V01= D A7=5 .1C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01= SG I,V01= D A7=0 .1C n egatloVdrawroFedoiDV DS IS V,A7= SG 0=2 8.02 .1V ID -- VDS V GS =2.5V 3.0V6.0V 8.0V 10.0V 4.5V ID -- VGS V DS =10V Ta=- -25 02468 1 0 1 2 1 4 1 6 1 8 2 0 R DS (on) - - VGS R DS (on) -- Ta - -50 - -25 0 25 50 75 100 125 150 ID=4A, V GS =4.5V ID=7A, VGS=10.0V IT00546 IT00547 IT00548 IT00549 Ta=25°C ID =4A 3.5V Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS(on) –m W Static Drain-to-Source On-State Resistance, RDS(on) –m W Ambient Temperature, Ta – ˚C

No.6269-3/4 FSS250 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 1.8 2.0 PD -- Ta 0.1 23 5 7 1.0 23 5 7 10 1000 100 1.0 SW Time -- ID td(on) V DD =15V V GS =10V 0.123 57 2 3 5 7 7 1.0 1023 5 7 23 5 100 1.0 0.1 100 0.01 0.01 A S O Operation in this area is limited by RDS (on). DC opration IDP ID <100µs 100µs1ms 10ms 100ms tr td(off) tf IT00554 IT00556 IT00555 1000 100 0 5 10 15 20 25 30 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss 01 2 345 67 89 1 0 VGS -- Qg V DS =10V ID =7A IT00552 IT00553 100 1.0 0.1 0.1 1.0 75327 532 10 1.0 0.1 0.01 0.001 IF -- VSD 1.2 - -25 Ta=75 Ta=- -25 25°C 75°C IT00550 IT00551 V DS =10V V GS =0 Forward Transfer Admittance, |yf s|–S Drain Current, ID –A | yfs | - ID Diode Forward Voltage, VSD –V Forward Current, IF –A Switching Time, SW Time – ns Drain Current, ID –A Drain Current,ID –A Drain-to-Source Voltage, VDS –V Ciss, Coss, Crss – pF Gate-to-Source Voltage, VGS – V Drain-to-Source Voltage, VDS –V Total Gate Charge, Qg – nC Ta=25°C Single pulse Mounted on a ceramic board (1000mm2·0.8mm) Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Mounted on a ceramic board (1000mm 2·0.8mm)

PS No.6269-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. FSS250