FSS162

FSS162 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 8 A Drain Current (PW≤10s) I D Duty cycle≤1% - -10 A Drain Current (PW≤10µs) I DP Duty cycle≤1% - -52 A Allowable Power Dissipation P D Mounted on a ceramic board (1200mm25 0.8mm), PW≤10s 2.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -30 V Zero-Gate Voltage Drain Current I DSS VDS =- -30V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.0 - -2.4 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -8A 9 15 S R DS (on)1 I D =- -8A, VGS =- -10V 18 24 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =- -4A, VGS =- -4.5V 26 37 m Ω R DS (on)3 I D =- -4A, VGS =- -4V 30 43 m Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 2500 pF Output Capacitance Coss V DS =- -10V, f=1MHz 460 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 370 pF Marking : S162 Continued on next page. 71206 / 40506PA MS IM TB-00002255 FSS162 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No. A0348-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Turn-ON Delay Time t d(on) See specified Test Circuit. 28 ns Rise Time t r See specified Test Circuit. 180 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 140 ns Fall Time t f See specified Test Circuit. 100 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -8A 47 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -8A 7 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -8A 9 nC Diode Forward Voltage V SD IS=- -8A, VGS =0V - -0.83 - -1.5 V Package Dimensions Switching Time Test Circuit unit : mm 7005-002 5.0 4.4 6.0 0.3 1.5

1.8 MAX

0.10.595 1.27 0.20.43 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Drain-to-Source V oltage, VDS -- V Gate-to-Source V oltage, V GS -- V Drain Current, ID -- A ID -- VDS ID -- VGS IT10765 IT10766 0 --3.5--0.50 --8 --6 --7 --5 --4 --3 --2 --1 --12 --10 --8 --6 --4 --2 --10.0V --6.0V --4.5 V --8.0V --4.0V V GS = --2.5V --25 °CTa=75 V DS = --10V --5.0V Drain Current, ID -- A PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --8A R L=1.88Ω VDD = --15V VOUT FSS162 VIN --10V VIN

No. A0348-3/4 100 1000 IT10772IT10771 IT10770 --0.001 --0.01 --0.1 --1.0 --10 IT10769 --25 f=1MHz Ciss Coss Crss Ta=75 --0.1 --1.0 23 5 723 5 7 2 --10 3 1.0 V DS = --10V 25°C Ta= --25 75°C V GS =0V 100 V DD = --15V V GS = --10V td(off) tf tr td(on) --100 --10 --1.0 --0.01 --0.1 2323 5 723 5 723 5 7--0.01 --0.1 --1.0 --10 5 IT10774IT10773 --1 --2 --3 --4 --5 --6 --7 --8 5020 30 35 40 4525 --10 --9 51 0 1 5 V DS = --10V ID = --8A ≤10µs Operation in this area is limited by RDS (on). 1ms 10ms 10s 100ms ID = --8A IDP = --52A DC operation Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A A S OVGS -- Qg Ta=25°C Single pulse Mounted on a ceramic board (1200mm25 0.8mm) Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Drain Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDSSW Time -- ID IS -- VSDyfs -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Ambient Temperature, Ta -- °CGate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta IT10767 IT10768 ID= --4A, VGS= --4.5VID= --4A, VGS= --4.0V Ta=25°C ID = --4A --8A ID = --8A, VGS = --10.0V

No. A0348-4/4PS Note on usage : Since the FSS162 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. IT10775 20 40 0.5 1.0 1.5 80 100 120 2.0 2.5 2.4 3.0 140 160 Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W PD -- Ta Mounted on a ceramic board (1200mm 250.8mm), PW ≤10s Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice.