FSS131 SANYO | Alldatasheet

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS131 Package Dimensions unit : mm 2116 [FSS131] N1500 TS IM TA-2719 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Load Switching Applications 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.50.1 1.8max 0.43 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D -- 6 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -48 A Allowable Power Dissipation P D Mounted on a ceramic board (1200mm25 0.8mm) 1.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -20 V Zero-Gate Voltage Drain Current I DSS VDS =- -20V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -0.4 - -1.4 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -6A 10.5 15 S Marking : S131 Continued on next page.

No.6786-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -6A, VGS =- -4V 29 38 m Ω R DS (on)2 I D =- -2A, VGS =- -2.5V 41 58 m Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 2100 pF Output Capacitance Coss V DS =- -10V, f=1MHz 480 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 320 pF Turn-ON Delay Time t d(on) See specified Test Circuit 28 ns Rise Time t r See specified Test Circuit 240 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 93 ns Fall Time t f See specified Test Circuit 130 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -6A 41 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -6A 4 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -6A 5 nC Diode Forward Voltage V SD IS=- -6A, VGS =0 - -0.82 - -1.5 V Switching Time Test Circuit PW=10 µs --4V VIN P. G 50Ω G S ID = --6A R L=1.67Ω VDD = --10V VOUTVIN D FSS131 D.C.≤1% --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 ID -- VDS V GS = --1.5V --2.0V --2.5V --6.0V --8.0V --4.0V --3.0V --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 ID -- VGS V DS = --10V Ta=75 --25 R DS (on) -- VGS Ta=25°C ID = --2A --6A R DS (on) -- Ta - -60 - -40 - -20 0 20 40 60 80 100 120 160 140 ID= --2A, V GS = --2.5V ID = --6A, VGS = --4.0V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C IT02526 IT02527 IT02528 IT02529

No.6786-3/4 1000 100 td(on) V DD = --10V V GS = --4V 0 20 40 60 80 100 120 140 160 0.5 1.0 2.0 1.8 1.5 2.5 --0.123 57 23 5 7 7 --1.0 --1023 5 7 23 5 --100 --10 --1.0 --0.1 --100 --0.01 --0.01 DC operation IDP = --48A ID = --6A 1ms 10ms 100ms tr td(off) tf --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 5 10 15 20 30 25 454035 V DS = --10V ID = --6A 10000 1000 100 Ciss Coss Crss f=1MHz --25 Ta=75 °CTa= --25 25°C 75°C V DS = --10V 100 1.0 0.1 --10 --1.0 --0.1 --0.01 --0.001 V GS =0 Operation in this area is limited by RDS (on). Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Amibient Tamperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT02534 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF IT02532 IT02533 yfs -- ID Drain Current, ID -- A Forward Transfer Admittance, yfs -- S IF -- VSD Diode Forward V oltage, VSD -- V Forward Current, IF -- A IT02530 IT02531 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT02535 <10µs Ta=25°C Single pulse Mounted on a ceramic board (1200mm 5 0.8mm) Mounted on a ceramic board(1200mm 50.8mm) IT02536

No.6786-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS