FSQS30A045 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 2
Technical content
SchottkyBarrierDiode FSQS30A045 www.iscsemi.com
FEATURES
- LowForwardVoltage Drop
- High Frequency Operation
- RoHSCompliant
APPLICATIONS
- Bypass Diode forSolarCells
- Re-Circulating Diode
- DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage 45 V IF(AV) AverageRectifiedForwardCurrent 30 A IFSM Non-repetitivePeakSurgeCurrent (HalfSineWave,1Cycle, Non-Repetitive) 400 A TJ Max. JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W 1 3
SchottkyBarrierDiode FSQS30A045 www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25 °Cunlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF MaximumInstantaneousForward Voltage IF=30A -- -- 0.56 V IR MaximumInstantaneousReverse Current VR=VRWM -- -- 1.00 mA PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.