FS4KM-12A

FS4KM-12A MITSUBISHI | Alldatasheet

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MITSUBISHI Nch POWER MOSFET FS4KM-12A HIGH-SPEED SWITCHING USE Sep. 2001 2.6 ± 0.2 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 ➀➁➂ ➀ GATE ➁ DRAIN ➂ SOURCE MITSUBISHI Nch POWER MOSFET FS4KM-12A HIGH-SPEED SWITCHING USE 600 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 VGS = 0V VDS = 0V L = 200µH AC for 1minute, T erminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight V V A A A W V g VDSS VGSS ID IDM IDA PD Tch Tstg Viso Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit FS4KM-12A OUTLINE DRAWING Dimensions in mm APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. TO-220FN G 10V DRIVE

MITSUBISHI Nch POWER MOSFET FS4KM-12A HIGH-SPEED SWITCHING USE Sep. 2001 3.0 1.8 3.6 4.0 650 1.5 I D = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V , VGS = 0V, f = 1MHz VDD = 200V, ID = 2A, VGS = 10V , RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance 600 ±30 2.5 2.4 ELECTRICAL CHARACTERISTICS (Tch = 25°C) V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ±10 3.5 2.4 4.8 2.0 4.17 Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES 0 200 50 100 150 10–1 100 101 10135 72 10235 7 723 5 2 TC = 25°C Single Pulse 100µs tw = 10µs DC 1ms 10ms 0 1 02 03 04 05 0 VGS = 20V,10V,8V PD = 30W TC = 25°C Pulse Test 1.0 2.0 3.0 4.0 5.0 0 4 8 1 21 62 0 VGS = 20V,10V,8V PD = 30W TC = 25°C Pulse Test 5V6V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)

MITSUBISHI Nch POWER MOSFET FS4KM-12A HIGH-SPEED SWITCHING USE Sep. 2001 048 1 2 1 6 2 0 TC = 25°C Pulse Test ID = 8A 1.0 2.0 3.0 4.0 5.0 –1 2 10035 7 2 10135 7 2 10235 7 TC = 25°C Pulse Test VGS = 10V 20V 0 4 8 12 16 20 TC = 25°C VDS = 10V Pulse Test 10–1 10110023 5 7 23 5 7 10–1 100 101 VDS = 10V Pulse Test TC = 25°C 75°C 125°C 10035 7 1013225 7 102323 257 101 102 103 Tch = 25°C VGS = 0V f = 1MHz Ciss Coss Crss 10–1 10110023 5 7 23 5 7 101 102 Tch = 25°C VGS = 10V VDD = 200V RGEN = RGS = 50Ω td(off) td(on) tf tr ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)

MITSUBISHI Nch POWER MOSFET FS4KM-12A HIGH-SPEED SWITCHING USE Sep. 2001 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 0 8 16 24 32 40 VDS = 100V 400V200V TCh = 25°C ID = 4A VGS = 0V Pulse Test TC = 25°C 75°C 125°C 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 2A Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D= T tw T D = 1.0 = 0.5 = 0.2 Single Pulse = 0.05 = 0.02 = 0.01 = 0.1 GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE CHARGE Qg (nC) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE VSD (V) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Zth (ch– c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE CURRENT IS (A)