FS4KM-12

FS4KM-12 MITSUBISHI | Alldatasheet

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Feb.1999 600 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V V A A W V rms g FS4KM-12 VDSS VGSS ID IDM PD Tch Tstg Viso OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. VGS = 0V VDS = 0V AC for 1minute, Terminal to case Typical value Symbol Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight Parameter Conditions Ratings Unit MAXIMUM RATINGS (Tc = 25°C) w q e 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 123 q GATE w DRAIN e SOURCE

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V , ID = 2A, VGS = 10V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 600 ±30 1.8 2.0 4.0 3.0 600 1.5 ±10 2.6 5.2 2.0 3.57 0 200150100500 101 100 10–1 23 57 1 0 1 23 57 1 0 2 23 57 1 0 3 TC = 25°C Single Pulse tw=10µs 100µs 1ms 10ms DC 00 1 02 03 04 05 0 PD = 35W TC = 25°C Pulse Test VGS = 20V 10V 00 4 8 12 16 20 TC = 25°C Pulse Test VGS = 20V 10V 8V 6V PD = 35W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE 00 4 8 12 16 20 TC = 25°C VDS = 50V Pulse Test 101 10–1 10–1 23 5 7 1 0 0 100 23 5 7 1 0 1 TC = 25°C VDS = 10V Pulse Test 125°C 75°C 00 4 8 12 16 20 ID = 8A TC = 25°C Pulse Test 2310–1 57 1 00 23 57 1 0 1 23 57 1 0 2 TC = 25°C Pulse Test VGS = 10V 20V 23 571 0 2 102 101 23 571 0 123 571 0 0 23 103 Ciss Tch = 25°C f = 1MHz V GS = 0V Coss Crss 23 5 7 1 0 0 103 102 23 5 7 1 0 110–1 101 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ωtf td(off) tr td(on) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Feb.1999 MITSUBISHI Nch POWER MOSFET FS4KM-12 HIGH-SPEED SWITCHING USE 5.0 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 VDS = 10V ID = 1mA 1.4 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 VGS = 0V ID = 1mA 00 8 16 24 32 40 VDS = 100V 400V 200V Tch = 25°C ID = 4A 100 10–1 –50 101 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 10–4 101 100 10–1 23 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–110–2 PDM tw D= T tw T D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V BR (DSS) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V BR (DSS) (25°C) TC=125°C 25°C 75°C VGS = 0V Pulse Test