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Document overview
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Technical content
Features
- Electrical features - V DSS = 1200 V - I D nom = 400 A - New semiconductor material - Silicon Carbide - Low RDSon - Low Switching Losses - Low Qg and Crss - Low Inductive Design <10nH - T vj op = 150 °C
- Mechanical features - 4.2 kV DC 1 sec Insulation - High Creepage and Clearance Distances - Compact design - High Power Density - Direct Cooled PinFin Base Plate - High Performance Si3N4 Ceramic - Guiding elements for PCB and cooler assembly - Integrated NTC temperature sensor - PressFIT Contact Technology - RoHS compliant - UL 94 V0 module frame Potential applications
- Automotive Applications
- Hybrid Electrical Vehicles (H)EV
- Motor Drives
- Commercial Agriculture Vehicles
Description
T T T Type Package Marking FS03MR12A6MA1LB HybridPACK™ Drive Module SP002725554 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.00 www.infineon.com 2021-03-23
HybridPACK™ Drive module Table of contents Datasheet 2 Revision 1.00 2021-03-23
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 0 Hz, t = 1 sec 4.2 kV Material of module baseplate Ni+Cu1) Internal isolation basic insulation (class 1, IEC 61140) Si3N4 Creepage distance dCreep terminal to heatsink 9.0 mm Creepage distance dCreep terminal to terminal 9.0 mm Clearance dClear terminal to heatsink 4.5 mm Clearance dClear terminal to terminal 4.5 mm Comparative tracking index CTI > 200 1) Ni plated Cu baseplate Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Pressure drop in cooling circuit Δp ΔV/Δt = 10 dm³/min, 50% water / 50% ethylenglycol, TF = 60 °C 641) mbar Maximum pressure in cooling circuit p Tbaseplate < 40°C (relative pressure) 2.5 bar Tbaseplate > 40°C (relative pressure) 2.0 Stray inductance module LsDS 8.5 nH Module lead resistance, terminals - chip RCC'+EE' TF = 25°C, per switch 0.75 mΩ Storage temperature Tstg -40 125 °C Mounting torque for modul mounting M Screw M4 baseplate to heatsink 1.8 2.0 2.2 Nm Weight G 720 g 1) Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY
2 MOSFET
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj = 25 °C 1200 V DC drain current ID nom VGS = 15 V, TF = 60 °C Tvjmax = 175 °C 400 A Pulsed drain current ID pulse verified by design, tp limited by Tvjmax 800 A Gate-source voltage VGSS -10/+20 V FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 3 Revision 1.00 2021-03-23
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on resistance RDS(on) ID = 400 A, VGS = 15 V Tvj = 25 °C 2.75 3.70 mΩ Tvj = 125 °C 4.00 Tvj = 150 °C 4.55 Gate threshold voltage VGS(th) ID = 240 mA, VGS = VDS, (tested after 1 ms pulse at VGS= +20 V) Tvj = 25 °C 3.25 4.40 5.55 V Total gate charge QG VDS = 600 V, VGS = -5/+15 V 1.32 µC Internal gate resistor RGint Tvj = 25 °C 0.23 Ω Input capacitance Ciss f = 1 MHz, VDS = 600 V, VGS = 0 V Tvj = 25 °C 42.6 nF Output capacitance Coss f = 1 MHz, VDS = 600 V, VGS = 0 V Tvj = 25 °C 1.86 nF Reverse transfer capacitance Crss f = 1 MHz, VDS = 600 V, VGS = 0 V Tvj = 25 °C 0.17 nF COSS stored energy EOSS VDS = 600 V, VGS = -5/+15 V Tvj = 25 °C 438 µJ Drain-source leakage current IDSX VGS = -5 V, VDSS = 1200 V Tvj = 25 °C 100 µA Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Tvj = 25 °C 400 nA Turn-on delay time, inductive load td on ID = 400 A, RGon = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V Tvj = 25 °C 77 ns Tvj = 125 °C 62 Tvj = 150 °C 59 Rise time (inductive load) tr ID = 400 A, RGon = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V Tvj = 25 °C 79 ns Tvj = 125 °C 70 Tvj = 150 °C 69 Turn-off delay time, inductive load td off ID = 400 A, RGoff = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V Tvj = 25 °C 263 ns Tvj = 125 °C 287 Tvj = 150 °C 294 Fall time (inductive load) tf ID = 400 A, RGoff = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V Tvj = 25 °C 64 ns Tvj = 125 °C 64 Tvj = 150 °C 65 Turn-on energy loss per pulse Eon ID = 400 A, RGon = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V, Lσ = 20 nH Tvj = 25 °C, di/dt = 4 kA/µs 19.48 mJ Tvj = 125 °C, di/dt = 4.6 kA/µs 19.85 Tvj = 150 °C, di/dt = 4.6 kA/µs 20.16 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 4 Revision 1.00 2021-03-23
Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-off energy loss per pulse Eoff ID = 400 A, RGoff = 5.1 Ω, VGS = -5/+15 V, VDS = 600 V, Lσ = 20 nH Tvj = 25 °C, du/dt = 7.3 kV/µs 17.61 mJ Tvj = 125 °C, du/dt = 7.2 kV/µs 17.95 Tvj = 150 °C, du/dt = 7.1 kV/µs 18.21 Short circuit data ISC VGS = -5/+15 V, VDD = 800 V, VDSmax = VDSS-LsDS*di/dt, RG = 5.1 Ω tSC = 3 µs, Tvj = 25 °C 5300 A tSC = 3 µs, Tvj = 150 °C 4800 Thermal resistance, junction to cooling fluid RthJF per MOSFET , ∆V/∆t = 10.0 dm³/min; fluid = 50% water / 50% ethylenglycol, TF = 60 °C 0.1 0.1081 K/W Temperature under switching conditions Tvj op -40 150 °C 1) EoL criteria see AQG324, verified by characterization with 4.5 sigma. Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY
3 Body diode
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit DC body diode forward current ISD Tvjmax = 175 °C, VGS = -5 V TF = 60 °C 210 A Pulsed body diode current ISD pulse verified by design, tp limited by Tvjmax 800 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VDSR ISD = 400 A, VGS = -5 V Tvj = 25 °C 4.42 6.15 V Tvj = 125 °C 4.22 Tvj = 150 °C 4.16 Peak reverse recovery current Irrm ISD = 400 A, Vr = 600 V, VGS = -5 V Tvj = 25 °C 165 A Tvj = 125 °C 287 Tvj = 150 °C 309 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 5 Revision 1.00 2021-03-23
Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Recovered charge Qrr ISD = 400 A, Vr = 600 V, VGS = -5 V Tvj = 25 °C 11.20 µC Tvj = 125 °C 18.10 Tvj = 150 °C 19.30 Reverse recovery energy Erec ISD = 400 A, Vr = 600 V, VGS = -5 V Tvj = 25 °C, -di/dt = 5.9 kA/µs 1.4 mJ Tvj = 125 °C, -di/dt = 6.9 kA/µs 4.1 Tvj = 150 °C, -di/dt = 6.9 kA/µs 4.7
4 NTC-Thermistor
Table 7 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 6 Revision 1.00 2021-03-23
5 Characteristics diagrams
Pressure drop in cooling circuit, Δ p = f(Δ V/Δ t) TF = 60 °C, fluid = 50% water/50% ethylenglycol thermal impedance (typical), MOSFET RthJF = f(dv/dt) fluid = 50% water/50% ethylenglycol , TF = 60 °C 4 6 8 10 12 14 120 4 6 8 10 12 14 0.090 0.096 0.102 0.108 0.114 0.120 transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RGoff = 5.1 Ω, VGS = +15/-5 V, Tvj = 150 °C 2 4 6 8 10 12 200 400 600 800 0 200 400 600 800 1000 1200 1400 200 400 600 800 1000 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 7 Revision 1.00 2021-03-23
output characteristic (typical), MOSFET ID = f(VDS) Tvj = 25 °C output characteristic (typical), MOSFET ID = f(VDS) VGS = 15 V 200 400 600 800 -800 -600 -400 -200 200 400 600 800 drain source on-resistance (typical), MOSFET RDS(on) = f(Tvj) ID = 400 A, VGS = 15 V drain source on-resistance (typical), MOSFET RDS(on) = f(ID) VGS = 15 V 25 50 75 100 125 150 0 200 400 600 800 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 8 Revision 1.00 2021-03-23
capacity characteristic (typical), MOSFET C = f(VDS) Tvj = 25 °C, f = 1 MHz, VGS = 0.0 V switching losses (typical), MOSFET E = f(RG) ID = 400 A, VDS = 600 V, VGS = -5.0/15.0 V 0 120 240 360 480 600 0.1 100 5 10 15 20 25 30 100 120 switching losses (typical), MOSFET E = f(ID) VDS = 600 V, RGoff = 5.1 Ω, RGon = 5.1 Ω, VGS = -5.0/15.0 V transient thermal impedance (typical), MOSFET Zth = f(t) Δ V/Δ t = 10 dm³/min, fluid = 50% water/50% ethylenglycol , TF = 60 °C 0 200 400 600 800 0.001 0.01 0.1 1 10 0.001 0.01 0.1 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 9 Revision 1.00 2021-03-23
forward characteristic body diode (typical), MOSFET ISD = f(VSD) Tvj = 25 °C Switching losses body diode (typical), MOSFET Erec = f(ISD) Vr = 600 V, RGon = 5.1 Ω, VGS = -5.0/15.0 V 0 1 2 4 5 6 160 320 480 640 800 0 200 400 600 800 Switching losses body diode (typical), MOSFET Erec = f(RG) Vr = 600 V, ISD = 400 A, VGS = -5.0/15.0 V temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 100 1000 10000 100000 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 10 Revision 1.00 2021-03-23
6 Circuit diagram
U D 1. 2 D 1. 1 G 1 S 1 D 2 G 2 S 2. 1 S 2. 2 P 2 N 2 V D 3. 2 D 3. 1 G 3 S 3 D 4 G 4 S 4. 1 S 4. 2 P 3 N 3 W D 5. 2 D 5. 1 G 5 S 5 D 6 G 6 S 6. 1 S 6. 2 T T 1 T 2 T T 3 T 4 T T 5 T 6 Figure 2 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 11 Revision 1.00 2021-03-23
7 Package outlines
6x(N1-N3;P1-P3) 3x(U;V;W) 3x 3x 6x6x Y X B C D1.1 G1 S1 S2.1 G4 D4 S3G3 D3.1 D5.1 S6.1 S6.2D5.2 14±0,2 16±0,2 n5,3±0,15{ 4,3±0,15 A B C (119,55) (43,31°) 7,6±0,4 10,1±0,4 26±0,3 1±0,15 15,5±0,5 66,5±0,5 8,5±0,3 4±0,3 6,35±0,5 1±0,150 7,6±0,4 reference plane 22 F n5,5±0,1 n0,6 F G jn1,2 AD E G D E 32±0,2 14±0,2H n5,5±0,1 n0,6 H I jn1,2 ADE I 5,7 25±0,4 26,25±0,4 13,3 27,33 41,3 60,3 74,67 88,3 107,3 127±0,4 128,25±0,4 122 n4,5±0,15 n0,5 DE jn1,6 ABC 27,33 74,67 122 8,3 55,3 102,3 (87) 5±0,4 16,25 22,25±0,4 9,75±0,4 90,75±0,4 114,25 120,25±0,4 87±0,4 6+0 -0,2 S2.2 S3G3 S1G1 S5G5 WVU N1 P1 N2 P2 N3 P3 D1.2 S2.1 Pin positions checked with pin gauge according to Application Note AN-HPD_ASSEMBLY origin axis generated by G4,S4.1,D4,D5.2,S6.2,G6,S6.1,D6 S2.1 Drawing: W00153129 Rev.06 edges general tolerances surface DIN ISO 13715 1. DIN 16742-TG4 DIN EN ISO 1302 2. DIN ISO 2768-mK All dimensions refer to module in delivery condition D1.2 D1.1 D3.1 D5.1 D3.2 S4.2 S4.1 D5.2 S6.2 S6.1 S2.2 6x common zones D1-D2 D2-D3 D3-D4 D8-D7 D7-D6 D6-D5 Ac0,3 CZ (19,75) 3,94±0,5 refers to local CZ Areas R,S or T D2 D3 D4 D5D6D7 D8 C B L Ø0,8 L M jØ1,6 AB C M J K 18,85 51,85 59,35 67,15 74,1 69,85 12,2 0,05 8,05 20,2 34,8 46,95 55,05 67,2 81,8 93,95 102,05 114,2 125,25 74,65 27,35 23,25 23,25 13,95 6,2 2,15 23,35 33,05 40,8 44,85 70,35 74,65 27,35 80,05 87,8 91,85 117,35 125,25 Z Z ( 1.5 : 1 ) K J j**ABC 30x R S T X Y X-Y ( 1 : 1 ) 9,3±0,2 dimensioned for EJOT Delta PTWN5451 30 x 10 12,8±0,2 Figure 3 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 12 Revision 1.00 2021-03-23
8 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example Packing label code Code format Barcode Code128 Encoding Code Set A Symbol size 34 digits Standard IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Identifier X S Q Digit 2 – 9 12 – 19 21 – 25 28 – 31 33 – 34 Example 95056609 2X0003E0 754389 1139 Example X950566091T2X0003E0S754389D1139Q15 7154914284655054991153071549142846550549911530 Figure 4 FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 13 Revision 1.00 2021-03-23
Revision history
Revision Date of release Description of changes 0.20 2021-01-26 Preliminary datasheet 1.00 2021-03-23 Final datasheet FS03MR12A6MA1LB HybridPACK™ Drive module Datasheet 14 Revision 1.00 2021-03-23
All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-23 Published by Infineon Technologies AG
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© 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.