FRF12N80CT

FRF12N80CT GWSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 7

Technical content

Features

• Extremely low losses due to very low FOM Rdson*Qg and Eoss.
• Very high commutation ruggedness.
• Qualified for industrial grade applications according to JEDEC.

Applications

PFC stages, hard switching PWM stages and resonant switching PWM stages for Adapter, LCD TV, Lighting, and UPS. FRF12N80CT N-Channel MOSFET Maximum Ratings at T j = 25°C, unless otherwise specified Absolute Maximum Ratings Symbol Parameter Values Unit Test Condition Min. Typ. Max. V DS Drain-source voltage - - 800 V V GS =0V, I D =250μA I D Continuous drain current

3.5 A T

C =25°C T C =125°C I D,pulse Pulsed drain current - - A T C =25°C E AS Avalanche energy, single pulse - - 225 mJ I D =3A; V DD =50V I AR Avalanche current, repetitive - - 3 A - dv/dt MOSFET dv/dt ruggedness - - 50 V/ns V DS =0...640V V GS Gate source voltage -30 - 30 V static; AC (f>1 Hz) 1) Limited by T j max. Maximum duty cycle D=0.75. 2) Pulse width t p limited by T j ,max. 3) VDD=50V, RG=25Ω, Starting Tj=25°C. 4) V DClink =400V; V DS,peak (BR)DSS ; identical low side and high side switch with identical R G P tot Power dissipation - - 28 W T C =25°C T j , T stg Operating and storage temperature -55 - 150 °C - I S Continuous diode forward current - - 5 A T C =25°C I S,pulse Diode pulse current - - 10 A T C =25°C dv/dt Reverse diode dv/dt - - 15 V/ns V DS =0...400V, I SD <=I S , T j =25°C di f /dt Maximum diode commutation speed - - 500 A/ μs V DS =0...400V, I SD <=I S , T j =25°C

Min. Typ. Max. R thJC Thermal resistance, junction - case - - 4.5 °C/W T C = 25°C R thJA Thermal resistance, junction - ambient - - 62.5 °C/W T C = 25°C T sold Soldering temperature, wavesoldering only allowed at leads - - 260 °C Lead Temperature (Soldering, 10 sec) N-Channel MOSFET Static Characteristics Symbol Parameter Values Unit Test Condition Min. Typ. Max. V (BR)DSS Drain-source breakdown voltage 800 - - V V GS =0V, I D =250 μ A V (GS)th Gate threshold voltage 2.5 3.5 4.5 V V DS GS , I D =250 μ A I DSS Zero gate voltage drain current - - 1 10 μA V DS =800V, V GS =0V, T j =25°C V DS =800V, V GS =0V, T j =150°C I GSS Gate-source leakage current - - ±100 nA V GS =±20V, V DS =0V R DS(on) Drain-source on-state resistance - 0.80 2.05 0.90 Ω V GS =10V, I D =2.5A, T j =25°C V GS =10V, I D =2.5A, T j =150°C R G Gate resistance - 37.4 - Ω V DD =0V,V GS =0V,F=1MHz Dynamic Characteristics Symbol Parameter Values Unit Test Condition Min. Typ. Max. C iss Input capacitance - 541 - pF V GS =0V, V DS =50V, f=1MHz C oss Output capacitance - 31.6 - pF V GS =0V, V DS =50V, f=1MHz C rss Reverse transfer capacitance - 1.33 - pF V GS =0V, V DS =50V, f=1MHz t d(on) Turn-on delay time - 17.6 - ns V DD =400V, V GS =13V, I D =2.2A, t r Rise time - 22.4 - ns V DD =400V, V GS =13V, I D =2.2A, t d(off) Turn-off delay time - 64.2 - ns V DD =400V, V GS =13V, I D =2.2A, t f Fall time - 28.2 - ns V DD =400V, V GS =13V, I D =2.2A, Gate Charge Characteristics Symbol Parameter Values Unit Test Condition Min. Typ. Max. Q gs Gate to source charge - 2.7 - nC V DD =400V, I D =4A, V GS =0 to 10V Q gd Gate to drain charge - 4.97 - nC V DD =400V, I D =4A, V GS =0 to 10V Q g Gate charge total - 10.7 - nC V DD =400V, I D =4A, V GS =0 to 10V V plateau Gate plateau voltage - 5.42 - V V DD =400V, I D =4A, V GS =0 to 10V Reverse Diode Characteristics Symbol Parameter Values Unit Test Condition Min. Typ. Max. V SD Diode forward voltage - 0.86 - V V GS =0V, I F =5A, T f =25°C t rr Reverse recovery time - 181 - ns V R =400V, I F =1.1A, di F /dt=100A/μs Q rr Reverse recovery charge - 0.74 - μC V R =400V, I F =1.1A, di F /dt=100A/μs I rrm Peak reverse recovery current - 8.68 - A V R =400V, I F =1.1A, di F /dt=100A/μs FRF12N80CT

Electrical Characteristics

j = 25°C, unless otherwise specified

Electrical Characteristics Diagrams Power dissipation 0 25 50 75 100 125 1500 P t ot [W] T c O P tot =f(T C Max. transient thermal impedance Z thJC [K/W] t p [s] single pulse 0.01 0.02 0.05 0.1 0.3 0.5 Z thJC =f(t p ); parameter: D= t p FRF12N80CT N-Channel MOSFET Safe operating area 100ms DC 10ms 1ms 100µs I D [A] V DS [V] I D =f(V DS ); Tj=25°C; D=0; parameter: t p Typ. output characteristics 0 5 10 15 200 4.5V I D [A] V DS [V] 5.5V 10V 20V I D =f(V DS ); Tj=25°C; parameter: V GS Typ. output characteristics 0 5 10 15 200 4.5V I D [A] V DS [V] 5.5V 10V 20V I D =f(V DS ); Tj=125°C; parameter: V GS

Typ. drain-source on-state resistance drain-source on-state resistance 1 2 3 4 5 6 7 8 9 100.5 1.0 1.5 2.0 6.5V R dson [Ω] I D [A] 5.5V 10V -50 -25 0 25 50 75 100 125 1500.0 0.5 1.0 1.5 2.0 2.5 typ R dson [Ω] T j O R DS (on)=f(I D ); Tj=25°C; parameter: V GS R DS (on)=f(T j ); I D =1.5A; V GS =10V Typ. transfer characteristics Typ. gate charge 0 2 4 6 8 10 120 o C 125 o C I D [A] V GS [V] 0 2 4 6 8 10 120 400V V GS [V] Q gate [nC] I D =f(V GS ); V DS =20V; parameter: T j V GS =f(Q gate ); I D =4A pulsed; V DS =400V Electrical Characteristics Diagrams FRF12N80CT N-Channel MOSFET

Forward characteristics of reverse diode Drain-source breakdown voltage 0.0 0.5 1.0 1.510 o C I F [A] V SD [V] -75 -50 -25 0 25 50 75 100 125 150 175700 750 800 850 900 950 V BR(DSS) [V] T j O I F =f(V SD ); parameter: T j V BR(DSS) =f(T j ); I D =250µA Typ. capacitances Typ. Coss stored energy 0 100 200 300 400 50010 Crss Coss Ciss C [pF] V DS [V] 0 100 200 300 400 5000.0 0.5 1.0 1.5 2.0 2.5 E OSS [µJ] V DS [V] C=f(V DS ); V GS =0V; f=1MHz E OSS =f(V DS Electrical Characteristics Diagrams FRF12N80CT N-Channel MOSFET

Test circuit for diode characteristics Diode recovery waveform Switching Times Switching times test circuit for inductive load Switching times waveform Unclamped Inductive Load Unclamped inductive load test circuit Unclamped inductive waveform FRF12N80CT N-Channel MOSFET