FR501 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 5.0A
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode FR50X X:From 1 to 7 DO-2 DO-27 Plastic-Encapsulate Diodes Fast Recovery Rectifier FR501 THRU FR507 FR Item Symbol Unit Conditions 501 502 503 504 505 506 507 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=50℃ Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 200 Junction Temperature T J -55~+125 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified) FR Item Symbol Unit Test Condition 501 502 503 504 505 506 507 Peak Forward Voltage V FM V I FM =5.0A 1.3 I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μ RM RRM Ta=125℃ 50 Reverse Recovery time t rr I F =0.5A I R =1A I RR =0.25A 150 250 500 R θJ-A Between junction and ambient 20 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 10 n s A V Maximum RMS V RMS V Voltage 35 70 140 280 420 560 700
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time IF(A) FIG.3 TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 100 VF(V) FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 105 140 175 210 245 /92 /93 /94 /95 /96 /97 □ /98 /99 /100 /101 /97 □ /102 /100 /96 /103 □ /62 /100 /104 /97 □ /105 /41 /102 /106 □ /61 /97 /101 /93 /101 /107 /93 /104 /97 □ /108 /109 /55 /94 /110 /111 /112 /107 /93 /104 /97 □ /113 /108 /100 /110 □ /41 /57 /83 /84 /42 /114 /114 /71 /86 /57 /42 /115 /115 /72 □ /113 /97 /100 /110 □ /113 /97 /94 /95 /107 /99 /69 /100 /71 /116 /72 /43 /41 /41 /83 /57 /41 /42 /57 /41 /41 /117 /57 /41 /105 /57 /41 /118 /57 /41
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers