FR251 DSK | Alldatasheet
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Technical content
FEATURES
Case:JEDEC R--3,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.021 unces,0.58 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 253 FR 254 FR 255 FR 256 FR
257 UNITS
Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 2.5 A V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr 250 ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 500 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.5 A 100 FR 252 2.5 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 I R 150.0 5.0 100.0 1.3 A I FSM 3. Thermal resistance from junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 - 55---- + 150 150 FR251---FR257 R - 3 FR 251 Easily cleaned with Freon,Alcohol,Isopropanol 100 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
-1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) 0.6 T J =25 Pulse Width=300 µ S 0.4 0.04 0.01 0.02 0.06 0.1 0.2 1.0 100 TJ=25 f=1MHz .4 1.0 2 100 41 0 20 40 1 00 100 125 150 4 20 10040 60 TJ=125 8.3ms Single Half Sine-Wave 108 6 0.5 1.0 1.5 2.0 2.5 25 50 125 175 Single Phase Half Wave 60H Z Resistive or Inductive Load 75 1501000 PEAK FORWARD SURGE CURRENT AMPERES AMPERES INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE FIG.3--TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT FR251---FR257 JUNCTION CAPACITANCE,pF AMPERES NOTES: 1. RISE TIME =7ns MA X. INPUT IMPEDANCE=1M .22pF FI G. 1 -- TYPI CAL FORWARD DERATI NG CURVE FIG.2-- FORWARD SURGE CURRENT FI G. 4 --TYPI CAL FORWARD CHARACTERI STI C R EVER SE VOLT AGE,VOLT S AVERAGE FORWARD CURRENT 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O SE T TIM E BASE FOR 50/100 ns /cm FI G. 5 -- REVERSE RECOVERY TI ME CHARACTERI STI C AND TEST CI RCUI T DI AGRAM N UMBER OF C YC LES AT 60 Hz www.diode.kr Diode Semiconductor Korea