FR2010FC DSK | Alldatasheet
Document overview
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Technical content
16.5± 0.3 10.2± 0.2 15.0± 0.5 4.0± 0.3 13.5± 0.5 2.6± 0.15 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 φ 3.3± 0.1 φ3 .2± 0.2 8.2± 0.2 2.6± 0.2 0.6± 0.1
FEATURES
Case:JEDEC ITO-220AB ,molded plastic Terminals: solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.06 ounces,1.67 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 2020FC FR 2040FC FR 2060FC UNITS Maximum recurrent peak reverse voltage V RRM V Maximum RMS voltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 10 A V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 250 VOLTAGE RANGE: 100 --- 600 V CURRENT: 20 A 100 200 400 600 FR 2010FC 20 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 I R 200 150 1.3 70 140 280 420 A I FSM 3. Thermal resistance from junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 - 55---- + 150 3.0 150 FR2010FC---FR2060FC ITO-220AB 100 200 400 600 Easily cleaned with Freon,Alcohol,Isopropanol Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
-1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) T J =125 8.3ms Single Half Sine-Wave 24 1 0 81 0040 60 80 100 150 200 AMPERES PEAK FORWARD SURGE CURRENT AMPERES AMPERES 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O SE T TIM E BASE FOR 50/100 ns /cm FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM N UMBER OF CYC LES AT 60 Hz N O TE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- FORWARD DERATING CURVE FI G. 2--PEAK FORWARD SURGE CURRENT FI G. 4 --TYPI CAL FORWARD CHARACTERI STI C REVERSE VOLTAGE,VOLTS INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURREN T INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE FIG.3--TYPICAL JUNCTION CAPACITANCE FR2010FC- - - FR2060FC JUNCTION CAPACITANCE,pF Single Phase Half Wave 60H Z Resistive or Inductive Load 25 0 100 75 125 175 150 T J =25 Pulse Width=300 µ S 0.04 0.01 0.02 0.06 0.1 0.2 0.4 1.0 100 TJ=25 f=1MHz .4 1.0 2 100 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea