FR151G DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR152G FR153G FR154G FR155G FR156G FR157G UNITS Maximum recurrent peak reverse voltage V RRM 100 200 400 600 800 1000 V Max imum RMS v oltage V RMS 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (N ote1) t rr 250 ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R JA Operating junction temperature range T J Storage temperature range T STG FR151G --- FR157G A Easily cleaned with Alcohol,Isopropanol and similar z solvents I F(AV) GLASS PASSIVATED RECTIFIERS VOLTA GE RANGE: 50 --- 1000 V CURRENT: 1.5 A DO - 15 The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3.Thermal resistance junction to ambient AI R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A - 55 ---- + 175 - 55 ---- +175 1.3 V 60.0 FR151G 1.5 45.0 Maximum instantaneous forw ard voltage at 1.5A V F 100.0 5.0 500150 18.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
FIG.5-- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz FR151G --- FR157G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD CURRENT SET TIME BASE FOR 50/100 ns/cm FIG.2 --FORWARD DERATING CURVE FIG.3 -- TYPICAL FORWARD CHARACTERISTICS NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 --REPE FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT N NONIN- DUCTIVE N (+) 25VDC (approx) (-) D.U.T. PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) t rr -1.0A 1cm -0.25A +0.5A T J =25 0.01 0.1 1.0 Pulse width=300 s 0.1 0.2 0.4 1 2 100204 10 40 T J =25 200 100 0.25 1.25 25 50 75 100 125 150 175 0.50 1.00 0.75 1.50 Single Phase Half Wave 60H Z Resistive or Inductive Load 1 10 100 8.3ms Single Half Sine-Wave www.diode.kr Diode Semiconductor Korea