FPM2750QFN FILTRONIC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN FEATURES:

  • Balanced low noise amplifier module
  • Excellent Noise figure: 0.4dB at 1850MHz
  • Low drive current: 40mA typical (3.0V)
  • Combined IP3: 36dBm (100mA)
  • Combined P1dB: 23dBm (100mA)
  • Small footprint: 4mm x 4mm x 0.9mm QFN
  • RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. PACKAGE: T YPICAL APPLICATIONS:
  • Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations
  • High intercept-point LNAs ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated): Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted). PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Noise Figure NF VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 0.4 0.6 dB Output IP3 in balanced mode IP3 VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA dBm SSG in balanced mode SSG VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 17.5 18.5 dB P1dB in balanced mode P1dB VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 21.5 23.5 dBm Small Signal Gain SSG VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 19.0 19.5 dB Power at 1dB Gain Compression P1dB VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA 17.5 17.5 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 185 230 280 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 375 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 200 mS Gate-Source Leakage Current IGSO VGS = -5 V 5 μA Gate-Source Breakdown Voltage |VBDGS| IGS = 0.75 mA 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.75 mA 16 V Thermal Resistance ΘJC 1W dissipation, case temperature 22°C 124 °C/W

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN ABSOLUTE MAXIMUM RATING (PER TRANSISTOR)1: Notes: 1. T Ambient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2. RF Input must be further limited if input VSWR > 2.5:1 3. Total Power Dissipation is defined as: P TOT = PDC + PIN – POUT where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power Total Power Dissipation shall be de-rated above 22°C as follows: PTOT = (150 – TCASE ) / ΘJC W where TCASE = Temperature of the thermal pad on the underside of the package 4. ΘJC increases linearly from 124°C/W at a TCASE of 22°C to 145°C/W at a TCASE of 145°C 5. Information on the mounting of QFN style packages for optimum thermal performance is available on request. BIASING GUIDELINES:

  • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information.
  • Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices used in the FPM2750QFN
  • Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 4 Ω for a 50% of IDSS operating point.
  • For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% offers an optimised solution for NF and OIP3. PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS 6V Gate-Source Voltage VGS -3V Drain-Source Current IDS For VDS < 2V IDSS Gate Current IG Forward or reverse current 7.5mA RF Input Power (Note 2) PIN Under any acceptable bias state 150mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Total Power Dissipation (Note 3) PTOT See De-Rating Note below 1W Gain Compression Comp. Under any bias conditions 5dB

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN REFERENCE DESIGN 1850MHZ (BALANCED OPERATION): Note: Evaluation board drawing available upon request. BILL OF MATERIALS: DESIGNATOR SUPPLIER PART NUMBER DESCRIPTION QUANTITY C1, C2, C3, C4 RS Components 464-6587 CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR 4 C5, C6, C7, C8, C9, C17 RS Components 464-6385 CAP-10pF-0603-5%-50V-COG 6 C10, C18, C19, C20 RS Components 264-4602 CAP-22nF-0603-10%-50V 4 C11, C12, C13, C14, C15, C16 RS Components 464-6543 CAP-47nF-0603-+80/-20%-50V-Y5V 6 C25, C26, C27, C29 RS Components 406-0006 CAP-1uF-CASEB-20%-35V-TANT 4 L1, L2, L3, L4 RS Components 484-1372 IND-12nH-2012(0805)-5%-600mA-HQ 4 Q2 FILTRONIC FPM2750QFN Dual FPD750-QFN4x4 1 R1, R2 RS Components 213-2042 RESIST-22ohm-1608(0603)-1%-0.1W 2 R3, R4, R5, R6 RS Components 213-2143 RESIST-100ohm-1608(0603)-1%-0.1W 4 W1, W2 ANAREN 1P503 HYBRID COUPLER 2 RF1, RF2 RS Components 363-4707 SMA Side Mount RF Connector 2 (V1, V2) RS Components 453-173 DC Connector (4 way) 2 Evaluation board FILTRONIC EBD15PA 31mil thick FR4 1/2 Ounce Cu on both sides Note: Package Schematic

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN REFERENCE DESIGN 1850MHZ (SINGLE ENDED OPERATION): Note: Evaluation board drawing available upon request. BILL OF MATERIALS: DESIGNATOR SUPPLIER PART NUMBER DESCRIPTION QUANTITY C1, C2, C3, C4 RS Components 464-6587 CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR 4 C5, C6, C7, C8, C9, C17 RS Components 464-6385 CAP-10pF-0603-5%-50V-COG 6 C10, C18, C19, C20 RS Components 264-4602 CAP-22nF-0603-10%-50V 4 C11, C12, C13, C14, C15, C16 RS Components 464-6543 CAP-47nF-0603-+80/-20%-50V-Y5V 6 C25, C26, C27, C29 RS Components 406-0006 CAP-1uF-CASEB-20%-35V-TANT 4 L1, L2, L3, L4 RS Components 484-1372 IND-12nH-2012(0805)-5%-600mA-HQ 4 Q2 FILTRONIC FPM2750QFN Dual FPD750-QFN4x4 1 R1, R2 RS Components 213-2042 RESIST-22ohm-1608(0603)-1%-0.1W 2 RF1, RF2, RF3, RF4 RS Components 363-4707 SMA Side Mount RF Connector 4 (V1, V2) RS Components 453-173 DC Connector (4 way) 2 Evaluation board FILTRONIC EBD12PA 31mil thick FR4 1/2 Ounce Cu on both sides Note: Package Schematic

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: BALANCED OPERATION Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated otherwise. All measurements shown are referenced to evaluation board connectors. 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 NF (dB) Freq (GHz) -50 -40 -30 -20 -10 Input Return Loss (dB) Freq (GHz) -60 -50 -40 -30 -20 -10 Output Return Loss (dB) Freq (GHz) Gain (dB) Freq (GHz) '-40 °C' '20 °C' '80 °C' Output P1dB (dBm) Freq (GHz) '-40 °C' '20 °C' '80 °C' Output IP3 (dBm) Freq (GHz) '-40 °C' '20 °C' '80 °C'

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: SINGLE ENDED OPERATION Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated otherwise. All measurements shown are referenced to evaluation board connectors. 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 NF (dB) Freq (GHz) -16 -14 -12 -10 Input Return Loss (dB) Freq (GHz) -50 -40 -30 -20 -10 Output Return Loss (dB) Freq (GHz) -10 Gain (dB) Freq (GHz) Output P1dB (dBm) Freq (GHz) Output IP3 (dBm) Freq (GHz)

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN TYPICAL SMALL SIGNAL MAGNITUDE DIFFERENCE WITHIN A SINGLE PACKAGE: 400 300 200 100 Count |S11_ChA(mag) - S11_ChB(mag)| 500 400 300 200 100 Count |S22_ChA(mag) - S22_ChB(mag)| 300 200 100 Count -4 -2 0 2 4 S21_ChA(dB) - S21_ChB(dB) 400 300 200 100 Count -4 -2 0 2 4 S12_ChA(dB) - S12_ChB(dB) The histograms above represent the distribution of the asymmetry of RF parameters for the devices within a package. ChA and ChB are the two devices within the same package. The sample size for the histograms above is 1000 parts. PARAMETER MEDIAN STANDARD DEVIATION TEST LIMIT CPK |S11ChA(mag) - S11ChB(mag)| 0.0001 0.027 0.1 1.3 |S22ChA(mag) – S22ChB(mag)| 0.0001 0.019 0.1 1.7 S21ChA(dB) – S21ChB(dB) 0.006 0.408 ±0.75 0.68 S12ChA(dB) – S12ChB(dB) -0.128 0.205 ±0.75 1.43

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Datasheet v2.5 FPM2750QFN PACKAGE OUTLINE: (dimensions in millimeters – mm, centre paddle and pin 1 identifier are grounded) PREFERRED ASSEMBLY INSTRUCTIONS: Please contact Filtronic Compound Semiconductors Ltd for further details. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0- 250 V) as defined in JEDEC Standard No. 22- A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including S- parameters are available; please contact Filtronic Compound Semiconductors Ltd. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: TERMINAL FUNCTION 1-4, 6, 15 Source 1

5 RFin 1

7, 9-12, 14 Source 2

8 RFin 2

13 RFout 2

16 RFout 1

EB-FPM2750QFN-BAL Balanced Packaged pHEMT evaluation board EB-FPM2750QFN-SE Single-ended Packaged pHEMT evaluation board