IS452 ISOCOM | Alldatasheet
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Technical content
Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 HIGH DENSITY MOUNTING HIGH VOLTAGE DARLINGTON OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231
DESCRIPTION
The IS452 is an optically coupled isolator consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a space efficient dual in line plastic package.
FEATURES
l Marked as FPH1. l Current Transfer Ratio MIN. 1000% l High collector-emitter voltage, Vceo=300V l Isolation Voltage (3.75kVRMS ,5.3kVPK ) l All electrical parameters 100% tested l Drop in replacement for Sharp PC452
APPLICATIONS
l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances IS452 Dimensions in mm 17/10/03 DB92862l-AAS/A6
(25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO 300V Emitter-collector Voltage BVECO 0.1V Collector Current 150mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/°C above 25°C) PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (VF) 1.2 1.4 V IF = 10mA Reverse Current (IR) 10 µA VR = 4V Output Collector-emitter Breakdown (BVCEO) 300 V IC = 0.1mA Emitter-collector Breakdown (BVECO) 0.1 V IE = 10uA Collector-emitter Dark Current (ICEO) 200 nA VCE = 200V Coupled Current Transfer Ratio (CTR) 1000 % 1mA IF , 2V VCE Collector-emitter Saturation VoltageVCE (SAT) 1.2 V 20mA IF , 100mA IC Input to Output Isolation Voltage VISO 3750 VRMS See note 1
5300 VPK See note 1
Input-output Isolation Resistance R ISO 5x1010 Ω VIO = 500V (note 1) Output Rise Time tr 4 18 µs VCE = 2V , Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Note 1 Measured with input leads shorted together and output leads shorted together. 17/10/03 DB92862l-AAS/A6
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1 TAPING DIMENSIONS Description Symbol Dimensions in mm ( inches ) Tape wide W 12 ± 0.3 ( .47 ) Pitch of sprocket holes P0 4 ± 0.1 ( .15 ) Distance of compartment F 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) Distance of compartment to compar tment P1 8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forward Current vs. Fig.2 Collector Power Dissipation vs. Ambient Temperature Fig.4 Forward Current vs. Forward Collector-emitter Voltage Fig.6 Collector Current vs. Current Fig.5 Current Transfer Ratio vs. Forward Fig.3 Collector-emitter saturation Voltage vs. Forward current Collector power dissipation Pc (mW) Current transfer ratio CTR (%) Collector current Ic (mA) Forward current (mA) Collector-emitter voltage V (V) Ambient temperature Ta ( C) Ambient temperature Ta ( C) 100 150 200 0.1 Ambient Temperature o o Voltage 10mA 1.5mA 1mA V CE =2V 1000 2000 3000 5000 Ic=5mA 10mA 30mA 50mA 70mA 2 4 531 4000 3mA I F =0.5mA 100 1.5mA CE 7000 6000 1 2 3 4 5 2mA 2.5mA 0.5 1.5 2.5 4.5 3.5 100mA P C (MAX.) 5mA Forward current (mA) 0.5 100 1.91.3 Forward voltage (V) 60 C 100 C 80 C o o o o 40 C o 20 C Forward current I F(mA) Forward current I F (mA) Collector-emitter saturation voltageVCE (sat) (V) 0 5025 75 100 125-55 -55 125250 50 75 100
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage Fig.9 Collector Dark Current vs. Temperature Fig.10 Response Time vs. Load CE vs. Ambient Temperature Ambient temperature Ta ( C) Relative current transfer ratio (%) Collector-emitter saturation voltageV (sat) (V) Ambient temperature Ta ( C) 100 1.0 10.1 1000 O O Resistance Voltage gain Av (dB) -25 Frequency f (kHz) 500 Fig.11 Frequency Response 80604020 0.8 0.6 0.4 0.2 -10 -15 -20 1001010.1 V CE =2V I C =20mA Ta=25 C R L =1k 100 10 100 200 500 Response time ( Load resistance R L (k ) V CE =2V I C =20mA Ta=25 C Test Circuit for Response Time Test Circuit for Frequency Response Input Output Input Output Vcc td tr tf ts 90% 10% Output Vcc Ambient temperature Ta ( C) 10080604020 O 1000 100 Collector dark current I CEO (nA) t r t f t d t s 1.0 10040 60 80 0.8 0.6 0.4 0.2 1.2 R D R L R LR D I F =1mA V CE =2V V CE =200V I F =20mA I C =100mA O O 1.2
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 1 minute 2 minutes 1.5 minutes 1 minute 25 C 180 C 200 C 230 C (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1).