FPDA200V FILTRONIC | Alldatasheet

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Preliminary Data Sheet FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS Phone: (408) 988-1845 http:// www.filss.com Revised: 2/25/02 Fax: (408) 970-9950 Email: sales@filss.com

  • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization
  • DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems, broad bandwidth amplifiers, and optical systems. Source vias have been added for improved performance and assembly convenience. Each via hole has 0.02 nH of inductance. Additionally, the via holes remove the need for source bond wires, meaning only two bond wires are required for assembly. Because the via connects the source pad to the backside metallization, self-bias configurations should be designed with caution.
  • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 40 60 85 mA Power at 1-dB Compression P-1dB VDS = 5 V; IDS = 50% IDSS 19 21 dBm Power Gain at 1-dB Compression G-1dB VDS = 5 V; IDS = 50% IDSS 11 12.5 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS 55 % Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 125 mA Transconductance GM VDS = 2 V; VGS = 0 V 50 70 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 10 µA Pinch-Off Voltage VP VDS = 2 V; IDS = 1 mA -0.25 -0.8 -1.5 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 1 mA 6 7 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 1 mA 8 9 V Thermal Resistivity Θ JC 260 °C/W frequency=18 GHz DRAIN BOND PAD DIE SIZE: 15.6X13.2 mils (395x335 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.1X3.1 mils (80x80 µm) GATE BOND PAD

Preliminary Data Sheet FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS Phone: (408) 988-1845 http:// www.filss.com Revised: 2/25/02 Fax: (408) 970-9950 Email: sales@filss.com

  • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 8 V Gate-Source Voltage VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C 2xIDSS mA Gate Current IG TAmbient = 22 ± 3 °C 10 mA RF Input Power PIN TAmbient = 22 ± 3 °C 100 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — -65 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 550 mW Notes:
  • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
  • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – P OUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
  • Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 550mW – (3.7mW/ °C) x THS where THS = heatsink or ambient temperature.
  • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
  • ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C.
  • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

Preliminary Data Sheet FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS Phone: (408) 988-1845 http:// www.filss.com Revised: 2/25/02 Fax: (408) 970-9950 Email: sales@filss.com All information and specifications are subject to change without notice. Units in microns