FPD1050SOT89

FPD1050SOT89 FILTRONIC | Alldatasheet

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FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 Device Design and Modelling Group Filtronic Compound Semiconductor Ltd.

FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The models coupled with package models (giv en elsewhere). The model describes the device and the inbuilt inductance provide d by the connecting bond wires. The metal fixture up until the connecting bond wires has been de-embedded. Models Two models are provided for different simulators these are as follows: TOM3 This model provides a good fit to the measured data and has an advanced charge form. This allows the TOM3 model to accurately model the device over a wide range of operating conditions. This model is recommended for use in most simulators TOM2 This model is provided for the simulators that do not include TOM3 within there component set. This model employs a similar charge from to the TOM3 but only has a simple charge model. Consequently I recommend this model only be used when the TOM3 component is not present.

FPD200 TOM3 and TOM2 Models 24/01/2005 TOM3 Model The TOM3 model was extracted for the FPD200 discrete part is shown below: External Parasitics The following network shows the external parasitics present in the device model: TOM 3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 RES ID= Rg R=1.145 Ohm RES ID=Rd R= 0.860 8 O hm RES ID=Rs R= 0.748 1 Oh m IND ID= Id L=0.055 nH IND ID=Is L =0.0 3655 nH IND ID= Ig L=0.155 n H CAP ID=CdsExt C= 0.0001 56 pF IND ID= Is E xt L=0.0072 nH IND ID=I dex t L=0.2414 n H IND ID= Igext L=0.1607 nH CAP ID=CgG round1 C= 0.051 24 pF CA P ID= CgGround2 C=0.02196 pF CA P ID= CdGround1 C=0.00822 pF CA P ID=CdG round2 C=0.0 0822 pF PORT P=1 Z=5 0 O hm PORT P=2 Z=50 Ohm PO RT P=3 Z=50 Ohm TOM3/TOM2 Model Rg Rd Rs Is Id CdsExt CdGround1 CdGround2 IdExt IsExt IgIgExt CgGround2CgGround1 TOM 3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 RES ID= Rg R=1.145 Ohm RES ID=Rd R= 0.860 8 O hm RES ID=Rs R= 0.748 1 Oh m IND ID= Id L=0.055 nH IND ID=Is L =0.0 3655 nH IND ID= Ig L=0.155 n H CAP ID=CdsExt C= 0.0001 56 pF IND ID= Is E xt L=0.0072 nH IND ID=I dex t L=0.2414 n H IND ID= Igext L=0.1607 nH CAP ID=CgG round1 C= 0.051 24 pF CA P ID= CgGround2 C=0.02196 pF CA P ID= CdGround1 C=0.00822 pF CA P ID=CdG round2 C=0.0 0822 pF PORT P=1 Z=5 0 O hm PORT P=2 Z=50 Ohm PO RT P=3 Z=50 Ohm TOM3/TOM2 Model TOM 3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 RES ID= Rg R=1.145 Ohm RES ID=Rd R= 0.860 8 O hm RES ID=Rs R= 0.748 1 Oh m IND ID= Id L=0.055 nH IND ID=Is L =0.0 3655 nH IND ID= Ig L=0.155 n H CAP ID=CdsExt C= 0.0001 56 pF IND ID= Is E xt L=0.0072 nH IND ID=I dex t L=0.2414 n H IND ID= Igext L=0.1607 nH CAP ID=CgG round1 C= 0.051 24 pF CA P ID= CgGround2 C=0.02196 pF CA P ID= CdGround1 C=0.00822 pF CA P ID=CdG round2 C=0.0 0822 pF PORT P=1 Z=5 0 O hm PORT P=2 Z=50 Ohm PO RT P=3 Z=50 Ohm TOM3/TOM2 Model TOM 3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 RES ID= Rg R=1.145 Ohm RES ID=Rd R= 0.860 8 O hm RES ID=Rs R= 0.748 1 Oh m IND ID= Id L=0.055 nH IND ID=Is L =0.0 3655 nH IND ID= Ig L=0.155 n H CAP ID=CdsExt C= 0.0001 56 pF IND ID= Is E xt L=0.0072 nH IND ID=I dex t L=0.2414 n H IND ID= Igext L=0.1607 nH CAP ID=CgG round1 C= 0.051 24 pF CA P ID= CgGround2 C=0.02196 pF CA P ID= CdGround1 C=0.00822 pF CA P ID=CdG round2 C=0.0 0822 pF PORT P=1 Z=5 0 O hm PORT P=2 Z=50 Ohm PO RT P=3 Z=50 Ohm TOM3/TOM2 Model Rg Rd Rs Is Id CdsExt CdGround1 CdGround2 IdExt IsExt IgIgExt CgGround2CgGround1 Figure 1 – Schematic of fitted model including external parasitics

FPD200 TOM3 and TOM2 Models 24/01/2005 Shown below is a table of the external parasitics. CdGround1 0.024 pF Ig 0.136 nH CdGround2 0.057 pF IsExt 0.0542 nH CgGround1 0.01224 pF Is 0.01 nH CgGround2 0.121 pF Rd 3.402 Ω IdExt 0.2754 nH Rs 3.302 Ω Id 0 nH Rg 3.243 Ω IgExt 0.2907 nH CdsExt 0.000156 pF Table 1 – External parasitic values

FPD200 TOM3 and TOM2 Models 24/01/2005 TOM3 Model Parameters The TOM3 model employs an excellent form for the charge relation within the p- HEMT discrete. Shown below are the extracted parameters for the FPD200 device: VTO -0.6471 V QGG0 1.227E-16 ALPHA 3.053 CDS 0.000234 BETA 0.000682 IS 1E-11 mA LAMBDA -0.02432 EG 0.8 V GAMMA 0.03358 N 1 Q 0.9352 XTI 2 K 4.279 TAU 0.001 ns VST 0.05677 VBI 1 V MST 0.2041 TAU_GD 1000 ns ILK 1.8E-6 mA KGAMMA 0.01194 PLK 1.5 V RG 0.01Ω QGQH 7.349E-16 RGSH 0Ω QGSH 8.451E-16 RD 0.01Ω QGDH 2.073E-17 RS 0.01Ω QGIO 2.002E-6 LS 0 nH QGQL 8.58E-16 LG 0 nH QGAG 2.21 LD 0 nH QGAD 2.241 NG 2 QGCL 7.715E-17 W 100 QGGB 144.55 Table 2 – TOM3 Model Parameters Add these parameters to the TOM3 model placed within the external parasitics.

FPD200 TOM3 and TOM2 Models 24/01/2005 TOM2 Model Parameters The TOM3 model evolved from the TOM3 model and hence share almost exactly the same form for the calculation of the non-linear current. The TOM2 model only employs a simple charge form and he nce should only be used when TOM3 components are not available. Shown belo w are the extracted elements for the FPD200 device: VTO -0.6471 V VMAX 0.95 V ALPHA 3.453 CGD 7.45E-5 pF BETA 0.000682 CGS 0.002467 pF GAMMA 0.0155 CDS 0.0002542 pF DELTA 36.23 RIS 0.01 Ω Q 0.9 RID 0.01 Ω NG 2 VBR 17 V ND 0 RDB 1.2E5 Ω TAU 0.001 CBS 1500 pF RG 0.01 LS 0 nH RGSH 0 LG 0 nH RD 0.01 LD 0 nH RS 0.01 AFAC 200 IS 1E-11 mA NFING 2 N 1 EG 0.8 VBI 1 V XTI 2 VDELTA 0.2 V Table 3 – TOM2 Model Parameters Add these parameters to the TOM2 model placed within the external parasitics.