FPD10000AF FILTRONIC | Alldatasheet
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Technical content
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04 Fax: +1 408 850-5766 Email: sales@filcsi.com
- PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.8GHz
- DESCRIPTION AND APPLICATIONS The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange- mount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.
- ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL Power at 1dB Gain Compression Class B Operation P1dB V DS = 12V; IDQ = 180 mA 40 dBm Power Gain at dB Gain Compression G 1dB V DS = 12V; IDQ = 180 mA VDS = 12V; IDQ = 300 mA dB Maximum Stable Gain: S21/S12 PIN = 0dBm, 50Ω system MSG V DS = 12 V; IDQ = 180 mA VDS = 12 V; IDQ = 300 mA 16.5 18.0 dB Power-Added Efficiency at 1dB Gain Compression PAE V DS = 12V; IDQ = 180 mA IRF (drive-up current) ~ 1.5A 55 % Adjacent Channel Power Ratio WCDMA BTS Forward (64 channels) 10.15 dB Pk/Avg 0.001% ACPR VDS = 12V; IDQ = 180 mA Channel power = 30 dBm -44 dBc Saturated Drain-Source Current I DSS V DS = 3.0 V; VGS = 0 V 5.2 A Gate-Source Leakage Current I GSO V GS = -3 V 3 mA Pinch-Off Voltage |V P| V DS = 3.0 V; IDS = 19 mA 1.1 V Gate-Drain Breakdown Voltage |V BDGD| I GD = 19 mA 30 35 V Thermal Resistivity (channel-to-case) ΘCC See Note on following page 3.5 °C/W SEE PACKAGE OUTLINE FOR MARKING CODE
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04 Fax: +1 408 850-5766 Email: sales@filcsi.com
- RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 10 to 12V Quiescent Current: From 180 (Class B) to 300 mA (Class AB) operation
- ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage V DS -3V < VGS < +0V 16 V Gate-Source Voltage V GS 0V < VDS < +15V -3 V Drain-Source Current I DS For VDS > 2V 50% I DSS mA Gate Current I G Forward / Reverse current +50/-8 mA RF Input Power2 P IN Under any acceptable bias state 1.75 W Channel Operating Temperature T CH Under any acceptable bias state 175 ºC Storage Temperature T STG Non-Operating Storage -40 150 ºC Total Power Dissipation P TOT See De-Rating Note below 42 W Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits3 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes:
- Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
- Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: P DC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
- Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 42 - (0.286W/°C) x TPACK where TPACK = source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55 °C Source flange temperature: PTOT = 42 - (0.286 x (55 – 22)) = 32.6W
- Note on Thermal Resistivity: The nominal value of 3.5 °C/W is measured with the package mounted on a large heatsink with thermal compo und to ensure adequate contact. The pack age temperature is referred to the Source flange.
- HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised duri ng handling. Proper Electrostatic Discharge (ESD) precautions should be observed at al l stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1- 1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04 Fax: +1 408 850-5766 Email: sales@filcsi.com
- BIASING GUIDELINES ¾ Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended, requiring a regulated negative voltage supply for depletion- mode devices such as the FPD10000AF. The Gate bias supply should be cap able of sinking / sourcing at least 10mA of current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage (typically -0.6 to -1.0V) is applied to the device before the Drain voltage, otherwise large amounts of Drain-Source current will be drawn, potentially leading to instability and self- oscillation. ¾ The recommended 180 – 300 mA bias point is nom inally a Class B/AB mode. A small amount of RF gain expansion prior to the onset of co mpression is normal for this operating point, and significant current drive-up should be expected. If a Class A ope ration is desired, users should check the de-rating limits given in the previous section to ensure reliable operation.
- PACKAGE OUTLINE (dimensions in millimeters – mm) All information and specifications subject to change without notice. PACKAGE MARKING CODE Example: f1ZD P3F f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type Status: D=Development P = Production Part Code denotes model (e.g. FPD10000AF) Part Type: F = FET (pHEMT)