FP750SOT343 FILTRONIC | Alldatasheet

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PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/01/02 Fax: (408) 970-9950 Email: sales@filss.com

  • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency
  • DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure , medium output power and/or high dynamic range. It utilizes a 0 .25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The FP750’s active areas are passivated with Si 3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for PCS and GSM base station front-ends.
  • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 180 220 265 mA Power at 1-dB Compression P-1dB f=2GHz; VDS = 3.3 V; IDS = 110mA 20 21 dBm Power Gain at 1-dB Compression G-1dB f=2GHz; VDS = 3.3 V; IDS = 110mA 16 17 dB Power-Added Efficiency PAE f=2GHz; VDS = 3.3 V; IDS = 110mA; POUT = 21 dBm 45 % f=2GHz; VDS = 3.3V; 40mA 0.4 dB f=2GHz; VDS = 3.3V; IDS = 60mA 0.5 dB Noise Figure NF f=2GHz; VDS = 3.3V; 110mA 0.7 dB Output Third-Order Intercept Point IP3 VDS = 3.3V; IDS = 110mA 33 dBm Transconductance GM VDS = 2 V; VGS = 0 V 170 220 mS Gate-Source Leakage Current IGSO VGS = -5 V 5 35 µA Pinch-Off Voltage VP VDS = 2 V; IDS = 2 mA -1.2 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 2 mA 10 12 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 2 mA 10 13 V

PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/01/02 Fax: (408) 970-9950 Email: sales@filss.com

  • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 5 V Gate-Source Voltage VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 7.5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 175 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — -65 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 1.0 W Notes:
  • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
  • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – P OUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
  • Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT = 1.0W – (0.007W/ °C) x TPACK where TPACK = source tab lead temperature.
  • This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
  • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
  • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/01/02 Fax: (408) 970-9950 Email: sales@filss.com

  • PACKAGE OUTLINE (dimensions in mm) All information and specifications are subject to change without notice. SOURCE SOURCEDRAIN GATE