FP420L90 SIEMENS | Alldatasheet

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Technical content

Features

  • Double differential magneto resistor on one carrier
  • Accurate intercenter spacing
  • High operating temperature range
  • High output voltage
  • Compact construction
  • Available in strip form for automatic assembly
  • Optimized intercenter spacing on modules m = 0.3 mm
  • Reduced temperature dependence of offset voltage Typical applications
  • Incremental angular encoders
  • Detection of sense of rotation
  • Detection of speed
  • Detection of position

The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as TAB. The basic resistance of each of the magneto resistors is 90Ω . The two series coupled pairs of magneto resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Type Ordering Code FP 420 L 90 Q65420-L90 (singular) FP 420 L 90 Q65420-L0090E001 (taped)

Characteristics (TA = 25°C) Parameter Symbol Value Unit Operating temperature TA – 40 / + 175 °C Storage temperature Tstg – 40 / + 185 °C Power dissipation1) Ptot 800 mW Supply voltage (B = 0.2 T,TA = 25°C) VIN 8V Thermal conductivity –attached to heatsink –in still air G thcase G thA 1.5 mW/K mW/K Nominal supply voltage ( B = 0.2 T)2) VINN 5V Basic resistance (I < 1 mA,B = 0 T) R01-3 160… 280 Ω Center symmetry3) M ≤ 3% Relative resistance change (R0 = R01-3, R04-6 atB = 0 T) B =± 0.3 T4) B =± 1 T RB/R0 > 1.7 > 7 Temperature coefficient B = 0 T B =± 0.3 T B =± 1 T TC R – 0.16 – 0.38 – 0.54 %/K %/K %/K 1) T =Tcase 2) T =Tcase, T < 80°C 4) 1 T = 1 Tesla = 104 Gauss M R 01 2– R 02 3–– R 01 2– M R 04 5– R 05 6–– R 04 5–

Max. power dissipation versus temperature Ptot =f(T),T =Tcase,TA Typical MR resistance versus temperature R01-3, 4-6 =f(TA),B = Parameter Maximum supply voltage versus temperature VIN =f(T),B = 0.2 T Typical MR resistance versus magnetic inductionB