FP412L100 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Accurate intercenter spacing
  • High operating temperature range
  • High output voltage
  • Signal amplitude independent of speed
  • Compact construction
  • Available in strip form for automatic assembly Typical applications
  • Detection of speed
  • Detection of position
  • Detection of sense of rotation
  • Angular encoders
  • Linear position sensing Type Ordering Code FP 412 L 100 Q65412-L100

The differential magneto resistor FP 412 L 100 is a magnetically variable resistor in L- type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of each of the magneto resistors is 100Ω . The series coupled MRs are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Maximum ratings Characteristics ( TA = 25°C) Parameter Symbol Value Unit Operating temperature TA – 40 / + 175 °C Storage temperature Tstg – 40 / + 185 °C Power dissipation1) Ptot 1000 mW Supply voltage2) (B = 0.2 T) VIN 10 V Thermal conductivity –attached to heatsink –in still air G th case G th A ≥ 20 mW/K Basic resistance (I≤ 1 mA,B = 0 T)3) R01-3 150… 250 Ω Center symmetry4) M ≤ 10 % Relative resistance change R0 = R01-3, atB = 0 T B =± 0.3 T B =± 1 T RB/R0 > 1.7 > 7 Temperature coefficient B = 0 T B =± 0.3 T B =± 1 T TC R – 0.16 – 0.38 – 0.54 %/K %/K %/K 1) Corresponding to diagramPtot =f(Tcase) 2) Corresponding to diagramVIN =f(Tcase) 3) 1 T = 1 Tesla = 104 Gauss M R 01 2– R 02 3–– R 01 2–

Max. power dissipation versus temperature Ptot =f(T),T =Tcase,TA Typical MR resistance versus temperature R1-3 =f(TA),B = Parameter Maximum supply voltage versus temperature VIN =f(T),B = 0.2 T,T =Tcase,TA Typical MR resistance versus magnetic induction B R1-3= f(B),TA = 25°C