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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 21
Technical content
Features
- Electrical features - V CES = 1200 V - I C nom = 25 A / ICRM = 50 A - TRENCHSTOP TM IGBT7 - Overload operation up to 175°C - Low V CEsat
- Mechanical features - High power density - PressFIT contact technology - 2.5 kV AC 1 min insulation - Al 2O3 substrate with low thermal resistance - Compact design Potential applications
- Auxiliary inverters
- Air conditioning
- Motor drives Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
FP25R12W1T7_B11 EasyPIM™ module Datasheet Please read the Important Notice and Warnings at the end of this document 0.10 www.infineon.com 2020-12-01
FP25R12W1T7_B11 EasyPIM™ module Table of contents Datasheet 2 0.10 2020-12-01
1 Package
Table 1 Insulation Coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comperative tracking index CTI > 200 RTI Elec. RTI housing 140 °C Table 2 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 6 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 8 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G 24 g Note: The current under continuous operation is limited to 25A rms per connector pin.
2 IGBT , Inverter
Table 3 Maximum Rated Values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continous DC collector current ICDC Tvj max = 175 °C TH = 60 °C 25 A Repetitive peak collector current ICRM tP = 1 ms 50 A Gate-emitter peak voltage VGES ±20 V FP25R12W1T7_B11 EasyPIM™ module Datasheet 3 0.10 2020-12-01
Table 4 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 Gate threshold voltage VGEth IC = 0.525 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 0.395 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.77 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.017 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.0056 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 6.2 Ω Tvj = 25 °C 0.037 µs Tvj = 125 °C 0.039 Tvj = 175 °C 0.040 Rise time (inductive load) tr IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 6.2 Ω Tvj = 25 °C 0.020 µs Tvj = 125 °C 0.024 Tvj = 175 °C 0.025 Turn-off delay time (inductive load) tdoff IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 6.2 Ω Tvj = 25 °C 0.186 µs Tvj = 125 °C 0.291 Tvj = 175 °C 0.334 FP25R12W1T7_B11 EasyPIM™ module Datasheet 4 0.10 2020-12-01
Table 4 Characteristic Values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Fall time (inductive load) tf IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 6.2 Ω Tvj = 25 °C 0.173 µs Tvj = 125 °C 0.220 Tvj = 175 °C 0.285 Turn-on energy loss per pulse Eon IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 6.2 Ω, di/dt = 950 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.55 mJ Tvj = 125 °C 2.1 Tvj = 175 °C 2.45 Turn-off energy loss per pulse Eoff IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 6.2 Ω, dv/dt = 2900 V/µs (Tvj = 175 °C) Tvj = 25 °C 1.58 mJ Tvj = 125 °C 2.45 Tvj = 175 °C 3.05 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 80 A tP ≤ 7 µs, Tvj = 175 °C Thermal resistance, junction to heatsink RthJH per IGBT 1.55 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
3 Diode, Inverter
Table 5 Maximum Rated Values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continous DC forward current IF 25 A FP25R12W1T7_B11 EasyPIM™ module Datasheet 5 0.10 2020-12-01
Table 5 Maximum Rated Values (continued) Parameter Symbol Note or test condition Values Unit Repetitive peak forward current IFRM tP = 1 ms 50 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 72.5 A²s Tvj = 175 °C 63 Table 6 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A, VGE = 0 V Tvj = 25 °C 1.83 TBD V Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 Peak reverse recovery current IRM IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 950 A/µs (Tvj = 175 °C) Tvj = 25 °C 24.2 A Tvj = 125 °C 32.4 Tvj = 175 °C 37.6 Recovered charge Qr IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 950 A/µs (Tvj = 175 °C) Tvj = 25 °C 2.25 µC Tvj = 125 °C 3.82 Tvj = 175 °C 4.95 Reverse recovery energy Erec IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 950 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.65 mJ Tvj = 125 °C 1.41 Tvj = 175 °C 1.87 Thermal resistance, junction to heatsink RthJH per diode 2.04 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. FP25R12W1T7_B11 EasyPIM™ module Datasheet 6 0.10 2020-12-01
4 Diode, Rectifier
Table 7 Maximum Rated Values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 25 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 25 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 300 A Tvj = 150 °C 245 I2t - value I2t tP = 10 ms Tvj = 25 °C 450 A²s Tvj = 150 °C 300 Table 8 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF Tvj = 150 °C, IF = 10 A 0.80 V Reverse current Ir Tvj = 150 °C, VR = 1600 V 1 mA Thermal resistance, junction to heatsink RthJH per diode 1.54 K/W Temperature under switching conditions Tvj, op -40 150 °C
5 IGBT , Brake-Chopper
Table 9 Maximum Rated Values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continous DC collector current ICDC Tvj max = 175 °C TH = 60 °C 25 A Repetitive peak collector current ICRM tP = 1 ms 50 A Gate-emitter peak voltage VGES ±20 V FP25R12W1T7_B11 EasyPIM™ module Datasheet 7 0.10 2020-12-01
Table 10 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 25 A, VGE = 15 V Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 Gate threshold voltage VGEth IC = 0.525 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 0.395 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.77 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.017 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.0056 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 10 Ω Tvj = 25 °C 0.058 µs Tvj = 125 °C 0.060 Tvj = 175 °C 0.061 Rise time (inductive load) tr IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 10 Ω Tvj = 25 °C 0.055 µs Tvj = 125 °C 0.057 Tvj = 175 °C 0.058 Turn-off delay time (inductive load) tdoff IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 10 Ω Tvj = 25 °C 0.205 µs Tvj = 125 °C 0.310 Tvj = 175 °C 0.353 FP25R12W1T7_B11 EasyPIM™ module Datasheet 8 0.10 2020-12-01
Table 10 Characteristic Values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Fall time (inductive load) tf IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 10 Ω Tvj = 25 °C 0.173 µs Tvj = 125 °C 0.220 Tvj = 175 °C 0.285 Turn-on energy loss per pulse Eon IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 10 Ω, di/dt = 320 A/µs (Tvj = 175 °C) Tvj = 25 °C 2.15 mJ Tvj = 125 °C 2.65 Tvj = 175 °C 2.9 Turn-off energy loss per pulse Eoff IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 10 Ω, dv/dt = 2900 V/µs (Tvj = 175 °C) Tvj = 25 °C 1.58 mJ Tvj = 125 °C 2.45 Tvj = 175 °C 3.05 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 80 A tP ≤ 7 µs, Tvj = 175 °C Thermal resistance, junction to heatsink RthJH per IGBT 1.55 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
6 Diode, Brake-Chopper
Table 11 Maximum Rated Values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continous DC forward current IF 10 A FP25R12W1T7_B11 EasyPIM™ module Datasheet 9 0.10 2020-12-01
Table 11 Maximum Rated Values (continued) Parameter Symbol Note or test condition Values Unit Repetitive peak forward current IFRM tP = 1 ms 20 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 27.5 A²s Tvj = 175 °C 24 Table 12 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 10 A, VGE = 0 V Tvj = 25 °C 1.72 TBD V Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Peak reverse recovery current IRM IF = 10 A, VR = 600 V, -diF/dt = 300 A/µs (Tvj = 175 °C) Tvj = 25 °C 8.1 A Tvj = 125 °C 10.1 Tvj = 175 °C 11.7 Recovered charge Qr IF = 10 A, VR = 600 V, -diF/dt = 300 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.74 µC Tvj = 125 °C 1.37 Tvj = 175 °C 1.84 Reverse recovery energy Erec IF = 10 A, VR = 600 V, -diF/dt = 300 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.26 mJ Tvj = 125 °C 0.52 Tvj = 175 °C 0.72 Thermal resistance, junction to heatsink RthJH per diode 2.45 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
7 NTC-Thermistor
Table 13 Characteristic Values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ FP25R12W1T7_B11 EasyPIM™ module Datasheet 10 0.10 2020-12-01
Table 13 Characteristic Values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. FP25R12W1T7_B11 EasyPIM™ module Datasheet 11 0.10 2020-12-01
8 Characteristics diagrams
output characteristic (typical), IGBT , Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT , Inverter IC = f(VCE) Tvj = 175 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 transfer characteristic (typical), IGBT , Inverter IC = f(VGE) VCE = 20 V switching losses (typical), IGBT , Inverter E = f(IC) RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 600 V, VGE = ± 15 V 5 6 7 8 9 10 11 12 13 14 0 5 10 15 20 25 30 35 40 45 50 FP25R12W1T7_B11 EasyPIM™ module Datasheet 12 0.10 2020-12-01
switching losses (typical), IGBT , Inverter E = f(RG) IC = 25 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT , Inverter t = f(IC) RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 0.001 0.01 0.01 0.1 0.1 1 1 10 10 switching times (typical), IGBT , Inverter t = f(RG) IC = 25 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C dv/dt (typical), IGBT , Inverter dv/dt = f(RG) IC = 25 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 0 10 20 30 40 50 60 70 0.001 0.01 0.01 0.1 0.1 1 1 10 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 FP25R12W1T7_B11 EasyPIM™ module Datasheet 13 0.10 2020-12-01
transient thermal impedance , IGBT , Inverter Zth = f(t) reverse bias safe operating area (RBSOA), IGBT , Inverter IC = f(VCE) RGoff = 6.2 Ω, VGE = ±15 V, Tvj = 175 °C 0.01 0.1 0.1 1 1 10 10 0 200 400 600 800 1000 1200 1400 capacity characteristic (typical), IGBT , Inverter C = f(VCE) VGE = 0 V, f = 100 kHz, Tvj = 25 °C gate charge characteristic (typical), IGBT , Inverter VGE = f(QG) IC = 25 A, Tvj = 25 °C 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.01 0.1 0.1 1 1 10 10 100 100 0 0.1 0.2 0.3 0.4 -15 -12 FP25R12W1T7_B11 EasyPIM™ module Datasheet 14 0.10 2020-12-01
forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 6.2 Ω, VCE = 600 V 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 35 40 45 50 0.5 1.5 2.5 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 25 A transient thermal impedance , Diode, Inverter Zth = f(t) 0 10 20 30 40 50 60 70 0.5 1.5 2.5 0.01 0.1 0.1 1 1 10 10 FP25R12W1T7_B11 EasyPIM™ module Datasheet 15 0.10 2020-12-01
forward characteristic (typical), Diode, Rectifier IF = f(VF) transient thermal impedance , Diode, Rectifier Zth = f(t) 0.01 0.1 0.1 1 1 10 10 output characteristic (typical), IGBT , Brake-Chopper IC = f(VCE) VGE = 15 V forward characteristic (typical), Diode, Brake- Chopper IF = f(VF) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 FP25R12W1T7_B11 EasyPIM™ module Datasheet 16 0.10 2020-12-01
temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 100 1000 1000 10000 10000 100000 100000 FP25R12W1T7_B11 EasyPIM™ module Datasheet 17 0.10 2020-12-01
9 Circuit diagram
J Figure 2 FP25R12W1T7_B11 EasyPIM™ module Datasheet 18 0.10 2020-12-01
FP25R12W1T7_B11 EasyPIM™ module Datasheet 19 0.10 2020-12-01
11 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 4 FP25R12W1T7_B11 EasyPIM™ module Datasheet 20 0.10 2020-12-01
All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-12-01 Published by Infineon Technologies AG
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© 2020 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.