FP1510SOT89 FILTRONIC | Alldatasheet
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Preliminary Data Sheet FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/26/02 Fax: (408) 970-9950 Email: sales@filss.com
- FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency
- DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Ga llium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobi lity Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FP1510 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include driv ers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.
- ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current LP1510SOT89-1 IDSS VDS = 2 V; VGS = 0 V 375 420 450 mA LP1510SOT89-2 451 490 526 mA LP1510SOT89-3 527 560 600 mA Power at 1-dB Compression P-1dB V DS = 5 V; IDS = 50% IDSS 26.5 28 dBm Power Gain at 1-dB Compression G-1dB V DS = 5 V; IDS = 50% IDSS 17 19 dB Power-Added Efficiency PAE V DS = 5 V; IDS = 50% IDSS; PIN = 15 dBm 50 % Noise Figure NF V DS = 5 V; IDS = 50% IDSS 1.0 dB Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 50% IDSS; PIN = -1 dBm 45 dBm Maximum Drain-Source Current I MAX VDS = 2 V; VGS = 1 V 925 mA Transconductance G M VDS = 2 V; VGS = 0 V 300 400 mS Gate-Source Leakage Current I GSO VGS = -5 V 10 100 µA Pinch-Off Voltage V P VDS = 2 V; IDS = 8 mA -0.25 -1.2 -2.0 V Gate-Source Breakdown Voltage Magnitude |VBDGS|I GS = 8 mA 10 12 V Gate-Drain Breakdown Voltage Magnitude |VBDGD|I GD = 8 mA 10 13 V frequency=1.8 GHz
Preliminary Data Sheet FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/26/02 Fax: (408) 970-9950 Email: sales@filss.com
- ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage V DS TAmbient = 22 ± 3 °C 7V Gate-Source Voltage V GS TAmbient = 22 ± 3 °C -3 V Drain-Source Current I DS TAmbient = 22 ± 3 °C IDSS mA Gate Current I G TAmbient = 22 ± 3 °C 7m A RF Input Power P IN TAmbient = 22 ± 3 °C 220 mW Channel Operating Temperature T CH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature T STG —- 6 5 1 7 5 º C Total Power Dissipation P TOT TAmbient = 22 ± 3 °C 2.3 W Notes:
- Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
- Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
- Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 2.3W – (0.015W/°C) x TPACK where TPACK = source tab lead temperature. This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
- HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during hand ling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
- APPLICATIONS NOTES & DESIGN DATA Applications Notes are av ailable from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parame ters, noise data, and large-signal models are available on the Filtronic web site.
Preliminary Data Sheet FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 2/26/02 Fax: (408) 970-9950 Email: sales@filss.com
- PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice.