FP101 SANYO | Alldatasheet
Document overview
- Manufacturer or author: jack
- PDF pages: 3
Technical content
Features
- Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
- The FP101 is formed with 2chips, one being equiva- lent to the 2SB1121 and the other the SB05-05CP, placed in one package. Marking:101 Electrical Connection Continued on next page. 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) (Top view) Mounted on ceramic board (250mm2×0.8mm)
No.3960-2/4 retemaraPl obmySs notidnoC sgnitaR tinU nimp ytx am ]RT[ tnerruCffotuCrotcelloCI OBC V BC I,V02–= E 0=1 .0–A µ tnerruCffotuCrettimEI OBE V BE I,V4–= C 0=1 .0–A µ niaGtnerruCCD h EF 1V EC I,V2–= C Am001–=0 410 65 h EF 2V EC I,V2–= C A5.1–=5 6 tcudorPhtdiwdnaB-niaGf T V EC I,V01–= C Am05–=0 51z HM ecnaticapaCtuptuOb oCV BC zHM1=f,V01–=2 3F p egatloVnoitarutaSE-CV )tas(EC IC I,A5.1–= B Am57–=5 3.0–6 .0–V egatloVnoitarutaSE-BV )tas(EB IC I,A5.1–= B Am57–=5 8.0–2 .1–V egatloVnwodkaerBB-CV OBC)RB( IC I,Aµ01–= E 0=0 3–V egatloVnwodkaerBE-CV OEC)RB( IC R,Am1–= EB =∞ 52–V egatloVnwodkaerBB-EV OBE)RB( IE 0=CI,Aµ01–=6 –V emiTNO-nruTt no tiucriCtseTdeificepseeS0 6s n emiTegarotSg tstt iucriCtseTdeificepseeS0 53s n emiTllaFt f tiucriCtseTdeificepseeS5 2s n ]DBS[ egatloVesreveRV R IR Aµ002=0 5V egatloVdrawroFV F IF Am005= 55.0V tnerruCesreveRI R VR V52= 05A µ ecnaticapaClanimretretnIC V R zHM1=f,V01=2 2F p emiTyrevoceResreveRt rr IF I= R tiucriCtseTdeificepseeS,Am001= 01s n ecnatsiseRlamrehTa -jhtR 021 Continued from preceding page. Electrical Characteristics at Ta=25˚C ˚C/W Switching Time Test Circuit (TR) (SBD) Mounted on ceramic board (250mm2×0.8mm)
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