FMS4

FMS3 ROHM | Alldatasheet

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General purpose (dual transistors) FMS3 / FMS4 / IMT4 !Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits −120 −120 −50 300 (TOTAL) 150 −55∼+150 Unit V V V mA mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗200mW per element must not be exceeded. !!!!Package, marking, and Packaging specifications FMS3 SMT5 T148 3000 FMS4 SMT5 T148 3000 IMT4 SMT6 T108 3000 Part No. Package Marking Code Basic ordering unit (pieces) !!!!Circuit diagram FMS3 FMS4 IMT4 !!!!External dimensions (Units : mm) ROHM : SMT5 EIAJ : SC-74A IMT4 FMS4 FMS3 Each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) ROHM : SMT5 EIAJ : SC-74A Each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions (6)(5)(4) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 (3) 2.8 1.6 1.9 0.95 (2) 0.95 (1) !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) −120 −120 −0.5 −0.5 −0.5 V V V µA µA V I C=−50µA IC=−1mA IE=−50µA VCB=−100V VEB=−4V IC/IB=−10mA/−1mA hFE 180 − 820 − VCE=−6V, IC−2mA Transition frequency f T − 140 − MHz ∗VCE=−12V, IE=2mA, f=100MHz ∗Transition frequency of the device. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage