FMS2029_1 FILTRONIC | Alldatasheet

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DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Pre-Production Datasheet v3.0 FMS2029 FEATURES:

  • Low insertion loss: 2.2 dB at 20 GHz
  • High isolation: 50 dB at 20 GHz
  • Absorptive input and output in off-state
  • Excellent low control voltage performance
  • Available in die form GENERAL DESCRIPTION: The FMS20 29 is a low loss hig h isolatio n broadband singl e-pole-single-throw Gallium Arsenide switch, designed on th e FL05 0.5µm switch p rocess f rom Filtronic. I t of fers absorptive properties fro m both p orts (5 0 Ohms terminations). This process tech nology offers lea ding-edge performance optimised for switch applications. The FMS2029 is devel oped for the b roadband communications, i nstrumentation and electronic warfare markets. FUNCTIONAL SCHEMATIC: RFoutRFin V1 V2 TYPICAL APPLICATIONS:
  • Broadband communications
  • Test Instrumentation
  • Fibre Optics
  • Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED): PARAMETER CONDITIONS MIN TYP MAX UNITS Insertion Loss DC

5 GHz

10 GHz

15 GHz

20 GHz

-1.35 -1.65 -2.55 -0.85 -1.4 -1.7 -2.3 dB dB dB dB dB Isolation DC-20 GHz – -60 -45 dB Input Return Loss (ON state) DC-20 GHz – -20 -17 dB Output Return Loss (ON state) DC-20 GHz – -20 -17 dB Input Return Loss (OFF state) DC-20 GHz – -12 -10 dB Output Return Loss (OFF state) DC-20 GHz – -12 -10 dB P1dB

2 GHz

24.5 23.5 20.5 26.7 25.2 22.5 dBm dBm dBm Switching speed 10% to 90% RF 90% to 10% RF 50% DC to 90% RF 50% DC to 10% RF ns ns ns ns Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V Note 2 : Specifications based on on-wafer measurements

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Pre-Production Datasheet v3.0 FMS2029 ABSOLUTE MAXIMUM RATINGS: Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: TRUTH TABLE: Note: -5V ± 0.2V; 0V ± 0.2V Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +27dBm Operating Temp Toper -40°C to +85°C Storage Temp Tstor -55°C to +150°C PAD NAME DESCRIPTION PIN COORDINATES (µm) RFIN RFIN 141,587 RFO RFOUT 1789,587 V1 V1 901,161 V2 V2 1101,161 CONTROL LINE RF PATH V1 V2 RFIN-RFO -5V 0V On (Low Loss) 0V -5V Off (Isolation) DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 1910 x 1110 100 150 116 x 116

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Pre-Production Datasheet v3.0 FMS2029 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25° C unless otherwise stated Insertion Loss (S21 ON) -2.50 -2.00 -1.50 -1.00 -0.50 0.00 0 2 4 6 8 101 21 41 61 82 0 Frequency (GHz) S21 (dB) Isolation (S21 OFF) -120.00 -100.00 -80.00 -60.00 -40.00 -20.00 0.00 0 2 4 6 8 10 121 4 161 82 0 Frequency (GHz) S21 (dB) Input Return Loss (S11 ON) -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 02 46 8 10 12 14 16 18 20 Frequency (GHz) S11 (dB) Output Return Loss (S22 ON) -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 0 2 4 6 8 101 2 141 6 182 0 Frequency (GHz) S11 (dB) IN and OUT Absorptive Return Loss (S11 OFF / S22 OFF) -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 02 46 8 10 12 14 16 18 20 Frequency (GHz) S11 (dB) P1dB 0.00 4.00 8.00 12.00 16.00 20.00 24.00 28.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) P1dB (dBm)

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Pre-Production Datasheet v3.0 FMS2029 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS OVER TEMPERATURE: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high) TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C Insertion Loss (S21 ON) -2.50 -2.00 -1.50 -1.00 -0.50 0.00 0 2 4 6 8 101 21 41 61 82 0 Frequency (GHz) S21 (dB) Isolation (S21 OFF) -120.00 -100.00 -80.00 -60.00 -40.00 -20.00 0.00 02468 10 12 14 16 18 20 Frequency (GHz) S21 (dB) Input Return Loss (S11 ON) -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 02 46 8 10 12 14 16 18 20 Frequency (GHz) S11 (dB) Output Return Loss (S22 ON) -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 0 2 4 6 8 101 2 141 6 182 0 Frequency (GHz) S22 (dB) Absorptive Output Return Loss (S22 OFF) -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 02 46 8 10 12 14 16 18 20 Frequency (GHz) S22 (dB) P1dB 0.00 4.00 8.00 12.00 16.00 20.00 24.00 28.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) P1dB (dBm)

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Pre-Production Datasheet v3.0 FMS2029 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices a re frag ile and should be handled with great care. Specially d esigned collets should be used where possible. The back of the die i s metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should b e applied to the atta chment surf ace unifo rmly and sparingly to avoid e ncroachment of epoxy on to the top face of the die and ideally should not exceed half the chip h eight. For aut omated dispense Abl estick LMIS R4 is recom mended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a te mperature of 150°C for one hour in an oven espe cially set asi de for epoxy curing only. If possi ble the curing oven should be flush ed with dry nitrogen. Eute ctic di e attach is not recommended. This p art h as gol d (Au ) bond pads requiri ng the use of g old (9 9.99% pure) b ondwire. It is recommended that 25.4 µm diameter g old wire be u sed. Thermosonic ball b onding i s preferred. A nominal stage temp erature o f 150°C and a bonding fo rce of 40g ha s bee n shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a mi nimum. For this bonding technique, stage temp erature should not b e rai sed above 200° C a nd bon d force should not be raised a bove 60g. Thermosonic wed ge bondi ng and thermocompression wedge bondi ng can also be used to achieve good wire bonds. Bonds should be made fr om the die firs t and then to the mounting su bstrate o r p ackage. The physical length of the bondwires should be minimised e specially wh en ma king RF o r ground connections. HANDLING PRECAUTIONS: To avoid d amage to the devi ces care should be exercised during handl ing. Proper Electro static Discha rge (ESD) precautions should b e ob served at all stages of storage, handling, a ssembly, an d testing. These devices should be treated as Class 1A (250-500 V ) as defin ed in JE DEC Standard No. 22 -A114. F urther in formation on ESD control me asures can b e found in MI L-STD- 1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including S- parameters are available on request. DISCLAIMERS: This p roduct is not desi gned for u se in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FMS2029-000-WP Die in Waffle-pack (Gel-pak available on request)