FMS2007QFN FILTRONIC | Alldatasheet
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Technical content
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN DC-6GHz DPDT Diversity Switch Features: ♦ 3x3x0.9mm Packaged pHEMT Switch ♦ Very High Tx-Rx isolation ♦ Suitable for WLAN 802.11a and 802.11b/g
Applications
♦ Filtronic Advanced GaAs pHEMT Technology ♦ Low Insertion Loss ♦ Excellent low control voltage performance Description and Applications: The FMS2007QFN is a low loss linear Double-Pole Double-Throw dual band diversity switch designed for use in WLAN applications. The die is fabricated using the Filtronic FL05 0.5 µm switch process technology, which offers leading edge perfor mance optimised for switch applications. Typical applications are for UNII, Hiperl an, 802.11a and 8 02.11b/g systems that em ploy two antennas for transmit and receive diversity. Electrical Specifications: (TAMBIENT = 25°C,Vcntrl = 0V/(2.4,3.3V), ZIN = ZOUT = 50Ω) Parameter Simulated Conditions Min Typ Max Units Insertion Loss 2.4GHz 0.9 dB Insertion Loss 6GHz 1.15 dB Return Loss 2.4GHz 18 dB Return Loss 6GHz 15 dB Tx-Rx Isolation 2.4GHz -37 dB Tx-Rx Isolation 6GHz -25 dB 2nd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl = 2.4V -70 dBc 3rd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl =2.4V -70 dBc Switching speed Vctrl=2.4V, Pin=20dBm 30 nS Note: External DC blocking capacitors are required on all RF ports (typ: 47pF) Functional Schematic V4 TX / RF1 V3 ANT1 RF3 ANT2 RF4 V1 RX / RF2 V2
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN Absolute Maximum Ratings: Parameter Symbol Absolute Maximum Max Input Power Pin +36dBm Control Voltage Vctrl +5V Operating Temperature Toper -40°C to +100°C Storage Temperature Tstor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: Switch State V1 V2 V3 V4 RX ANT1 RX ANT2 TX ANT2 TX ANT1
1 High Low Low Low Insertion Loss Isolation Isolation Isolation
2 Low High Low Low Isolation Insertion Loss Isolation Isolation
3 Low Low High Low Isolation Isolation Insertion Loss Isolation
4 Low Low Low High Isolation Isolation Isolation Insertion Loss
5 Low High Low High Isolation Insertion Loss Isolation Insertion Loss
6 High Low High Low Insertion Loss Isolation Insertion Loss Isolation
General Test Conditions: Bias Voltages LOW = 0V to +0.2V HIGH +2.5V to +5.0V Port Impedances 50Ω Off arm termination 50Ω
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN 0.5 1 1.5 2 2.5 3 Frequency (GHz) FMS2007QFN RETURN LOSS -40 -35 -30 -25 -20 -15 -10 dB 0 . 511 . 522 . 53 Frequency (GHz) FMS2007QFN Tx to Rx ISOLATION -60 -55 -50 -45 -40 -35 -30 -25 -20 dB 0.5 1 1.5 2 2.5 3 Frequency (GHz) FMS2007QFN INSERTION LOSS -1.5 -1.4 -1.3 -1.2 -1.1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 dB 4.5 5 5.5 6 Frequency (GHz) FMS2007QFN INSERTION LOSS 802 11a bands -1.5 -1.4 -1.3 -1.2 -1.1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 dB 4.5 5 5.5 6 Frequency (GHz) FMS2007 Tx to Rx ISOLATION 802 11a bands -40 -35 -30 -25 -20 -15 -10 dB 4.5 5 5.5 6 Frequency (GHz) FMS2007QFN RETURN LOSS 802 11a bands -40 -35 -30 -25 -20 -15 -10 dB Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions VCTRL=3V, TAMBIENT = 25°C unless otherwise stated)
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN Pad Layout: QFN 12 Lead 3*3 Package Outline: Pin Number Description
1 N/C
4 ANT1 / RF3
5 GND
6 ANT2 / RF4
9 N/C
10 RX / RF2
11 GND
12 Tx / RF1
12 Pin 1
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN Frequency (GHz) FMS2007QFN CAL BOARD INSERTION LOSS -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 dB Frequency (GHz) FMS2007QFN CAL BOARD RETURN LOSS -40 -37.5 -35 -32.5 -30 -27.5 -25 -22.5 -20 -17.5 -15 -12.5 -10 dB Evaluation Board: Evaluation Board De-Embedding Data (Measured): BOM Label Component C1 Capacitor, 100pF, 0603 C2 Capacitor, 47pF, 0402 BOARD Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance. Absolute placement of surface mount de-coupling capacitors is not critical. C2 C2 C2 C2 C2
Preliminary Data Sheet 2.2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN Ordering Information: Part Number Description FMS2007-001 Packaged Die FMS2007-001-EB Packaged die mounted on evaluation board Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500V). Further in formation on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Preferred Assembly Instructions: Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices) Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment.