EMS1 ROHM | Alldatasheet
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Emitter common (dual digital transistors) EMS1 / UMS1N / FMS1A zzzzFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. zzzzStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Tr 1 and Tr2. zzzzEquivalent circuit EMS1 / UMS1N FMS1A R 1 Tr1Tr2 (3) (4) (5) (2) (1) Tr1Tr2 (3) (2) (1) (4) (5) zzzzAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit VCBO −60 V −50 V V VCEO VEBO −6 IC mA150 Tj 150 ˚C Tstg −55∼+150 ˚C PC EMS1, UMS1N 150 (TOTAL) mW FMS1A 300 (TOTAL) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. zzzzExternal dimensions (Units : mm) ROHM : EMT5 EMS1 ROHM : UMT5 EIAJ : SC-88A UMS1N Each lead has same dimensions Each lead has same dimensions Each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 (4)(5) (1) 0.3 (3) 0.95 (2) Abbreviated symbol : S1 Abbreviated symbol : S1 Abbreviated symbol : S1 ROHM : SMT5 EIAJ : SC-74A FMS1A 0.22 1.2 1.6 (1) (2) (3) (5) (4) 0.13 0.5 0.50.5 1.0 1.60.9 0.15 0to0.1 0.1Min. 0.7 2.1 1.3 0.65 2.0 (4) (1) (5) 0.2 1.25 (2) 0.65 (3)
zzzzElectrical characteristics (Ta = 25°C) Parameter Symbol BV CBO BV CEO BV EBO ICBO IEBO hFE VCE (sat) Cob Min. −60 −50 120 −0.1 −0.1 560 −0.5 4.5 VI C =−50µA IC =−1mA IE=−50µA VCB =−60V VEB =−5V VCE =−6V, IC =−1mA IC /IB=−50mA/−5mA V V µA µA V PF Typ. Max. Unit Conditions fT − 140 − VCE =−12V, IE=2mA, f=100MHz VCB =−12V, IE=0A, f=1MHz MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage Output capacitance zzzzPackaging specifications Package Code TR T148 3000 3000 Taping Basic ordering unit (pieces) UMS1N T2R 8000 EMS1 FMS1A Type zzzzElectrical characteristic curves −0.2 COLLECTOR CURRENT : Ic (mA) −50 −20 −10 −0.5 −0.2 VCE =−6V BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics Ta=100˚C 25˚C −40˚C −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 IB=0 Ta=25˚C −35.0 COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.2 Grounded emitter output characteristics ( I ) −40 −80 −20 −60 −100 IB=0 Ta=25˚C COLLECTOR CURRENT : I C (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) −50µA −100 −150 −200 −250 −500 −450 −400 −350 −300
DC CURRENT GAIN : h FE Ta=25˚C VCE = −5V −3V −1V COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current ( I ) 500 200 100 DC CURRENT GAIN : hFE COLLECTOR CURRENT : I C (mA) VCE =−6V Fig.5 DC current gain vs. collector current ( II ) Ta=100˚C −40˚C 25˚C −0.1 −0.5 −0.2 −0.05 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : I C (mA) IC /IB=50 Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) −0.1 −0.5 −0.2 −0.05COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR CURRENT : I C (mA) lC /lB=10 Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) Ta=100˚C 25˚C −40˚C 50 1000.5 20 100 200 500 1000 12 5 1 0 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE =−12V Fig.8 Gain bandwidth product vs. emitter current COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage −0.5 −20 −1 −2 −5 −10 Cib Cob Ta=25˚C f=1MHz IE=0A IC =0A