FMMV105G ZETEX | Alldatasheet
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VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION PARTMARKING DETAILS FMMV105G – 4EZ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage VBR 30 V IR = 10 µA Reverse current I R 10 nA V R = 28V Series Inductance L S 3.0 nH f=250MHz Diode Capacitance Temperature Coefficient T CC 280 ppm/ °C V R = 3V, f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Diode Capacitance C d 1.8 2.8 pF V R = 25V, f=1MHz Capacitance Ratio C d / Cd 4.0 6.0 V R = 3V/25V, f=1MHz Figure of MERIT Q 250 350 V R = 3V, f=50MHz Spice parameter data is available upon request for this device FMMV105G SOT23