FMMT4400 ZETEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Turn-On Time t on 35 ns V CC=30V, VBE(off )=2V IC=150mA, IB1=15mA (See Fig.1) Turn-Off Time t off 255 ns V CC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 FEBRUARY 1997 ✪ PARTMARKING DETAILS: FMMT4400 - 1KZ FMMT4401 - 1L ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6V Continuous Collector Current I C 600 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL FMMT4400 FMMT4401 UNIT CONDITIONSMIN. MAX. MIN. MAX. Collector-Emitter Breakdown Voltage V(BR)CEO 40 40 V I C=1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 60 60 V I C=0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO 66 V I E=0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX 0.1 0.1 µA VCE=35V VEB(off) =0.4V Base Cut-Off Current IBEX 0.1 0.1 µA VCE=35V VEB(off) =3V Static Forward Current TransferRatio h FE 150 100 300 IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* Collector-Emitter Saturation Voltage VCE(sat) 0.4 0.75 0.4 0.75 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 1.2 0.75 0.95 1.2 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* Transition Frequency fT 200 250 MHz I C=20mA,VCE=10V f=100kHz Output Capacitance C obo 6.5 6.5 pF V CB=5 V,IE=0 f=100kHz Input Capacitance C ibo 30 30 pF V BE=0.5V, IC=0 f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMT4400 FMMT4401 C B E PAGE NUMBER FMMT4400 FMMT4401 PAGE NUMBER
SWITCHING CHARACTERISTICS (at Tamb= 25°C ) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Turn-On Time t on 35 ns V CC=30V, VBE(off )=2V IC=150mA, IB1=15mA (See Fig.1) Turn-Off Time t off 255 ns V CC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 4 FEBRUARY 1997 ✪ PARTMARKING DETAILS: FMMT4400 - 1KZ FMMT4401 - 1L ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6V Continuous Collector Current I C 600 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL FMMT4400 FMMT4401 UNIT CONDITIONSMIN. MAX. MIN. MAX. Collector-Emitter Breakdown Voltage V(BR)CEO 40 40 V I C=1mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 60 60 V I C=0.1mA, IE=0 Emitter-Base Breakdown Current V(BR)EBO 66 V I E=0.1mA, IC=0 Collector-Emitter Cut-Off Current ICEX 0.1 0.1 µA VCE=35V VEB(off) =0.4V Base Cut-Off Current IBEX 0.1 0.1 µA VCE=35V VEB(off) =3V Static Forward Current TransferRatio h FE 150 100 300 IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* Collector-Emitter Saturation Voltage VCE(sat) 0.4 0.75 0.4 0.75 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 1.2 0.75 0.95 1.2 V V IC=150mA,IB=15mA* IC=500mA,IB=50mA* Transition Frequency fT 200 250 MHz I C=20mA,VCE=10V f=100kHz Output Capacitance C obo 6.5 6.5 pF V CB=5 V,IE=0 f=100kHz Input Capacitance C ibo 30 30 pF V BE=0.5V, IC=0 f=100kHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMT4400 FMMT4401 C B E PAGE NUMBER FMMT4400 FMMT4401 PAGE NUMBER