FMMT3906 ZETEX | Alldatasheet

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C B E SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER SYMBOL FMMT3905 FMMT3906 UNIT CONDITIONS MIN MAX MIN MAX Delay Time t d 35 35 ns V CC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA (See Fig.1)Rise Time t r 35 35 ns Storage Time t s 200 225 ns V CC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2)Fall Time t f 60 75 ns FMMT3905 FMMT3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 4 – MARCH 2000 PARTMARKING DETAILS - FMMT3905 - 2W FMMT3906 - 2A COMPLEMENTARY TYPES - FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Collector-Base Voltage V CBO -40 V CollectorEmitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Continuous Collector Current I C -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT3905 FMMT3906. UNIT CONDITIONS. MIN MAX MIN MAX BreakdownVoltages V (BR)CBO -40 -40 V IC=-10µ A, IE=0 V(BR)CEO -40 -40 V I C=-1mA, IB=0* V(BR)EBO -5 -5 V IE=-10µA, IC=0 Cut-Off Currents I CEX -50 -50 nA V CE=-30V, VBE(off)=-3V IBEX -50 -50 nA V CE=-30V, VEB(off)=-3V Static Forward Current Transfer Ratio hFE 30 150 100 300 IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* Saturation Voltages VCE(sat) -0.25 -0.4 0.25 0.4 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* VBE(sat) -0.65 -0.85 -0.95 -0.65 -0.85 -0.95 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* Transition Frequency fT 200 250 MHz I C=-10mA, VCE=-20V f=100MHz Output Capacitance C obo 4.5 4.5 pF V CB=-5V, IE=0, f=100KHz Input Capacitance C ibo 10 10 pF V BE=0.5V, IC=0, f=100KHz Noise Figure N 5 4 dB I C=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% FMMT3905 FMMT3906 Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit PAGE NUMBER PAGE NUMBER

C B E SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER SYMBOL FMMT3905 FMMT3906 UNIT CONDITIONS MIN MAX MIN MAX Delay Time t d 35 35 ns V CC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA (See Fig.1)Rise Time t r 35 35 ns Storage Time t s 200 225 ns V CC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2)Fall Time t f 60 75 ns FMMT3905 FMMT3906 SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 – NOVEMBER 1995 ✪ PARTMARKING DETAILS - FMMT3905 - 2W FMMT3906 - 2A COMPLEMENTARY TYPES - FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Collector-Base Voltage V CBO -40 V CollectorEmitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Continuous Collector Current I C -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT3905 FMMT3906. UNIT CONDITIONS. MIN MAX MIN MAX BreakdownVoltages V (BR)CBO -40 -40 V IC=-10µ A, IE=0 V(BR)CEO -40 -40 V I C=-1mA, IB=0* V(BR)EBO -5 -5 V IE=-10µA, IC=0 Cut-Off Currents I CEX -50 -50 nA V CE=-30V, VBE(off)=-3V IBEX -50 -50 nA V CE=-30V, VEB(off)=-3V Static Forward Current Transfer Ratio hFE 30 150 100 300 I C=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* Saturation Voltages VCE(sat) -0.25 -0.4 0.25 0.4 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* VBE(sat) -0.65 -0.85 -0.95 -0.65 -0.85 -0.95 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* Transition Frequency fT 200 250 MHz I C=-10mA, VCE=-20V f=100MHz Output Capacitance C obo 4.5 4.5 pF V CB=-5V, IE=0, f=100KHz Input Capacitance C ibo 10 10 pF V BE=0.5V, IC=0, f=100KHz Noise Figure N 5 4 dB I C=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% FMMT3905 FMMT3906 Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit PAGE NUMBER PAGE NUMBER